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HM30N02K-VB Product details
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HM30N02K-VB MOSFET Product Introduction
**HM30N02K-VB** is a high-performance single N-channel MOSFET with a TO252 package type. This MOSFET is designed for low-voltage, high-current applications and can operate stably at a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) range of ±20V. Its threshold voltage (Vth) is between 0.5V and 1.5V, the on-resistance (RDS(ON)) is 6mΩ at VGS=2.5V and 4.5mΩ at VGS=4.5V, and the maximum drain current (ID) is 100A. HM30N02K-VB uses Trench technology, providing ultra-low on-resistance and efficient switching performance, making it ideal for applications with high current loads.
**HM30N02K-VB** is a high-performance single N-channel MOSFET with a TO252 package type. This MOSFET is designed for low-voltage, high-current applications and can operate stably at a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) range of ±20V. Its threshold voltage (Vth) is between 0.5V and 1.5V, the on-resistance (RDS(ON)) is 6mΩ at VGS=2.5V and 4.5mΩ at VGS=4.5V, and the maximum drain current (ID) is 100A. HM30N02K-VB uses Trench technology, providing ultra-low on-resistance and efficient switching performance, making it ideal for applications with high current loads.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HM30N02K-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Drain current (ID)**: 100A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
The ultra-low on-resistance and high current capability of the HM30N02K-VB MOSFET make it suitable for the following fields and modules:
1. **High current power switch**: In high current power switch applications, such as power distribution and high current power management, the HM30N02K-VB can handle currents up to 100A, ensuring high efficiency and reliability of the power switch.
2. **Motor drive**: In motor drive circuits, especially low voltage and high current motor control applications, this MOSFET can provide stable high current control, improving the performance and efficiency of motor drive.
3. **DC-DC converter**: In DC-DC converter modules, the HM30N02K-VB is suitable for high current switching, reducing switching losses and improving conversion efficiency, suitable for battery-powered portable devices and other high current applications.
4. **Power Regulation Module**: In power regulation and control modules, such as battery management systems and power electronic devices, the low on-resistance characteristics of the HM30N02K-VB enable it to effectively control high current loads, improving system stability and response speed.
5. **Electrical Protection Circuit**: In electrical protection circuits, this MOSFET can be used for high current overload protection and current limiting, ensuring safe and reliable operation of the circuit under abnormal conditions.
Due to its ultra-low on-resistance and high current capability, the HM30N02K-VB is an ideal choice for high current and low voltage applications, providing efficient switching performance and reliable current control solutions.
The ultra-low on-resistance and high current capability of the HM30N02K-VB MOSFET make it suitable for the following fields and modules:
1. **High current power switch**: In high current power switch applications, such as power distribution and high current power management, the HM30N02K-VB can handle currents up to 100A, ensuring high efficiency and reliability of the power switch.
2. **Motor drive**: In motor drive circuits, especially low voltage and high current motor control applications, this MOSFET can provide stable high current control, improving the performance and efficiency of motor drive.
3. **DC-DC converter**: In DC-DC converter modules, the HM30N02K-VB is suitable for high current switching, reducing switching losses and improving conversion efficiency, suitable for battery-powered portable devices and other high current applications.
4. **Power Regulation Module**: In power regulation and control modules, such as battery management systems and power electronic devices, the low on-resistance characteristics of the HM30N02K-VB enable it to effectively control high current loads, improving system stability and response speed.
5. **Electrical Protection Circuit**: In electrical protection circuits, this MOSFET can be used for high current overload protection and current limiting, ensuring safe and reliable operation of the circuit under abnormal conditions.
Due to its ultra-low on-resistance and high current capability, the HM30N02K-VB is an ideal choice for high current and low voltage applications, providing efficient switching performance and reliable current control solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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