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HM2N70K-VB Product details

Product introduction:

1. HM2N70K-VB Product Introduction

HM2N70K-VB is a high voltage single-channel N-type MOSFET in TO252 package, designed for medium and high voltage applications. The drain-source breakdown voltage (VDS) of this MOSFET is as high as 700V, which is suitable for handling switching and control tasks in high voltage environments. The gate-source voltage (VGS) range is ±30V, allowing operation over a larger gate voltage range. Its threshold voltage (Vth) is 3.5V, ensuring that it starts to conduct at a lower gate voltage. When VGS is 10V, its on-resistance (RDS(ON)) is 2400mΩ and the maximum drain current (ID) is 2A. Using SJ_Multi-EPI technology, it provides good voltage resistance and reliability, and is suitable for application scenarios requiring high voltage and large on-resistance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 700V 3.5V 2A 2400mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 700V 3.5V 2A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 700V 3.5V 2A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. HM2N70K-VB Detailed parameter description

- **Package type**: TO252
- **Channel configuration**: Single N type
- **Drain-source breakdown voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2400mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

3. Application fields and module examples of HM2N70K-VB

**1. High-voltage power switch **
HM2N70K-VB is suitable for high-voltage power switches, such as power adapters and high-voltage DC-DC converters. Its 700V drain-source breakdown voltage enables it to handle high-voltage loads, while the higher RDS(ON) is suitable for lower current applications, providing reliable switch control.

**2. Power converter **
In power converter applications, such as inverters and power conditioning modules, the high voltage withstand characteristics of HM2N70K-VB enable it to work stably in high-voltage environments. Its high voltage withstand capability can effectively cope with voltage spikes and interference during power conversion.

**3. Electronic ignition system **
In automotive electronic ignition systems, HM2N70K-VB can be used as a switch to control high-voltage ignition coils. Its 700V withstand voltage capability ensures high reliability of the ignition system and can effectively control the switch operation in a high voltage environment.

**4. High voltage circuit protection**
This MOSFET is also suitable for protection applications of high voltage circuits, such as overvoltage protection and voltage regulation. Its high VDS capability provides additional safety margin to protect other circuit components from damage during high voltage operation.

The high voltage handling capability and reliability of the HM2N70K-VB enable it to excel in applications such as high voltage power switches, power converters, electronic ignition systems, and circuit protection, providing a stable high voltage solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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