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HM2N60I-VB Product details
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HM2N60I-VB MOSFET Product Introduction
**HM2N60I-VB** is a high voltage single N-channel MOSFET in TO251 package. Designed for high voltage applications, this MOSFET is able to operate stably at a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) range of ±30V. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 4300mΩ at VGS=10V, and the maximum drain current (ID) is 2A. HM2N60I-VB uses Plannar technology, providing stable performance and reliable switching control suitable for high voltage environments.
**HM2N60I-VB** is a high voltage single N-channel MOSFET in TO251 package. Designed for high voltage applications, this MOSFET is able to operate stably at a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) range of ±30V. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 4300mΩ at VGS=10V, and the maximum drain current (ID) is 2A. HM2N60I-VB uses Plannar technology, providing stable performance and reliable switching control suitable for high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
HM2N60I-VB Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 4300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 4300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar
Domain and module applications：
Application fields and module examples
The high voltage and stability of HM2N60I-VB MOSFET make it suitable for the following fields and modules:
1. **High voltage power switch**: In high voltage power switch applications, such as power management and high voltage DC-DC converters, HM2N60I-VB can handle drain-source voltages up to 650V, provide reliable switching control, and ensure the stability of the power system.
2. **Power converter**: In power converter modules, such as AC to DC converters (AC-DC converters) and DC to DC converters (DC-DC converters), HM2N60I-VB can effectively control high voltage and current, ensuring the efficiency and reliability of power conversion.
3. **Industrial power management**: In industrial power management systems, this MOSFET is used for the control of high voltage loads, such as motor drives and power switches, which helps improve the reliability and safety of the system.
4. **Electrical protection circuit**: In electrical protection circuits, HM2N60I-VB can be used for switching and protection of high-voltage circuits, such as overvoltage protection and current limiting, to ensure stable operation of electrical systems under abnormal conditions.
5. **Power amplifier**: In power amplifiers and high-power power modules, the high voltage and switching capabilities of HM2N60I-VB are suitable for power switching and control, improving the performance and efficiency of power amplifiers.
Due to its high voltage carrying capability and stable switching characteristics, HM2N60I-VB is a reliable MOSFET choice in high-voltage applications, providing effective current control and power management solutions.
The high voltage and stability of HM2N60I-VB MOSFET make it suitable for the following fields and modules:
1. **High voltage power switch**: In high voltage power switch applications, such as power management and high voltage DC-DC converters, HM2N60I-VB can handle drain-source voltages up to 650V, provide reliable switching control, and ensure the stability of the power system.
2. **Power converter**: In power converter modules, such as AC to DC converters (AC-DC converters) and DC to DC converters (DC-DC converters), HM2N60I-VB can effectively control high voltage and current, ensuring the efficiency and reliability of power conversion.
3. **Industrial power management**: In industrial power management systems, this MOSFET is used for the control of high voltage loads, such as motor drives and power switches, which helps improve the reliability and safety of the system.
4. **Electrical protection circuit**: In electrical protection circuits, HM2N60I-VB can be used for switching and protection of high-voltage circuits, such as overvoltage protection and current limiting, to ensure stable operation of electrical systems under abnormal conditions.
5. **Power amplifier**: In power amplifiers and high-power power modules, the high voltage and switching capabilities of HM2N60I-VB are suitable for power switching and control, improving the performance and efficiency of power amplifiers.
Due to its high voltage carrying capability and stable switching characteristics, HM2N60I-VB is a reliable MOSFET choice in high-voltage applications, providing effective current control and power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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