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HM2N60F-VB Product details
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HM2N60F-VB MOSFET Product Introduction
**HM2N60F-VB** is a high voltage N-channel MOSFET in TO220F package. It is designed with Plannar technology and is designed to provide stable performance for high voltage applications. The drain-source voltage of this MOSFET reaches 650V, which is suitable for applications requiring high voltage. Its on-resistance is 1700mΩ at VGS=10V, and its drain current capability is 2A, which can provide reliable switching function in high voltage environment. Its threshold voltage is 3.5V, ensuring stable switching under common gate voltage.
**HM2N60F-VB** is a high voltage N-channel MOSFET in TO220F package. It is designed with Plannar technology and is designed to provide stable performance for high voltage applications. The drain-source voltage of this MOSFET reaches 650V, which is suitable for applications requiring high voltage. Its on-resistance is 1700mΩ at VGS=10V, and its drain current capability is 2A, which can provide reliable switching function in high voltage environment. Its threshold voltage is 3.5V, ensuring stable switching under common gate voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
HM2N60F-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1700mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology type**: Plannar
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1700mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology type**: Plannar
Domain and module applications：
Applications and module examples
1. **High-voltage power switch**: The 650V drain-source withstand voltage of HM2N60F-VB makes it very suitable for high-voltage power switch applications. For example, in high-voltage power adapters and high-voltage power modules, it can be used as the main switching element to effectively control the switching of the power supply and ensure the stability and safety of the circuit.
2. **Motor drive**: In the motor drive system, this MOSFET can be used as a switching element in the motor drive circuit to handle the start and operation of the motor at higher voltages. Its high withstand voltage capability enables it to provide stable switching operations in the working environment of the motor.
3. **Inverter and frequency converter**: HM2N60F-VB is capable of handling high-voltage switching operations in inverter and frequency converter applications. Its high drain-source withstand voltage and stable on-resistance ensure efficient energy conversion and system reliability of frequency converters and inverters, and is suitable for scenarios such as solar inverters and wind power inverters.
4. **High-voltage power supply protection circuit**: This MOSFET can also be used in the protection circuit of the high-voltage power supply to prevent overvoltage or short-circuit conditions from damaging the power supply. It can provide the necessary protection functions to ensure the long-term stable operation of the power supply system.
The high withstand voltage and high on-resistance of the HM2N60F-VB MOSFET are suitable for applications such as high-voltage power switches, motor drives, inverters and frequency converters, and high-voltage power supply protection circuits, providing a stable and reliable switching solution for various high-voltage scenarios.
1. **High-voltage power switch**: The 650V drain-source withstand voltage of HM2N60F-VB makes it very suitable for high-voltage power switch applications. For example, in high-voltage power adapters and high-voltage power modules, it can be used as the main switching element to effectively control the switching of the power supply and ensure the stability and safety of the circuit.
2. **Motor drive**: In the motor drive system, this MOSFET can be used as a switching element in the motor drive circuit to handle the start and operation of the motor at higher voltages. Its high withstand voltage capability enables it to provide stable switching operations in the working environment of the motor.
3. **Inverter and frequency converter**: HM2N60F-VB is capable of handling high-voltage switching operations in inverter and frequency converter applications. Its high drain-source withstand voltage and stable on-resistance ensure efficient energy conversion and system reliability of frequency converters and inverters, and is suitable for scenarios such as solar inverters and wind power inverters.
4. **High-voltage power supply protection circuit**: This MOSFET can also be used in the protection circuit of the high-voltage power supply to prevent overvoltage or short-circuit conditions from damaging the power supply. It can provide the necessary protection functions to ensure the long-term stable operation of the power supply system.
The high withstand voltage and high on-resistance of the HM2N60F-VB MOSFET are suitable for applications such as high-voltage power switches, motor drives, inverters and frequency converters, and high-voltage power supply protection circuits, providing a stable and reliable switching solution for various high-voltage scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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