Product introduction：
1. HM2800D-VB Product Introduction
HM2800D-VB is a high-efficiency dual-channel N-type MOSFET in a compact DFN6(2X2)-B package, designed for medium and low voltage applications. The drain-source breakdown voltage (VDS) of this MOSFET is 30V, which is suitable for switching and driving tasks in low voltage environments. Its gate-source voltage (VGS) range is ±20V, which can withstand large gate voltages. The threshold voltage (Vth) is 1.7V, which allows the MOSFET to be turned on at a relatively low gate voltage. At VGS of 4.5V, its on-resistance (RDS(ON)) is 26mΩ, and at VGS of 10V, RDS(ON) is 22mΩ. The maximum drain current (ID) is 5.8A, which can handle higher current loads. Manufactured using Trench technology, it provides low on-resistance and high efficiency, making it very suitable for application scenarios requiring high switching frequency and low power consumption.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN6(2X2)-B |
Dual-N+N |
30V |
|
1.7V |
5.8A |
|
|
22mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN6(2X2)-B |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN6(2X2)-B |
Dual-N+N |
30V |
|
1.7V |
5.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN6(2X2)-B |
Dual-N+N |
30V |
|
1.7V |
5.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN6(2X2)-B |
Dual-N+N |
|
|
|
|
|
|
|
2. Detailed parameter description of HM2800D-VB
- **Package type**: DFN6(2X2)-B
- **Channel configuration**: Dual N-type (N+N)
- **Drain-source breakdown voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 26mΩ @ VGS=4.5V
- 22mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5.8A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples of HM2800D-VB
**1. Switching power supply **
HM2800D-VB is suitable for switching power supply modules, including DC-DC converters and adapters. Its low on-resistance and high current capability enable it to effectively handle power management requirements with high switching frequencies, improving the efficiency and performance of switching power supplies.
**2. Motor drive **
In motor drive applications, such as power tools and small motor controllers, HM2800D-VB can be used as a power switch to control the start, stop and speed of the motor. Its maximum drain current of 5.8A and low RDS(ON) ensure the stability and efficiency of the motor drive system.
**3. LED drive **
This MOSFET is also very suitable for LED drive circuits, which can effectively control the brightness and switching of LEDs. Its low on-resistance reduces power loss and improves the energy efficiency and reliability of LED lighting systems.
**4. Portable devices**
In portable devices such as smartphones and portable chargers, HM2800D-VB can be used for power switching and current control. Its compact DFN6(2X2)-B package makes it suitable for space-constrained applications, while its high performance ensures long battery life and stable operation of the device.
The design features of HM2800D-VB enable it to excel in the fields of switching power supplies, motor drives, LED drives and portable devices, providing efficient and reliable solutions for various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page-B.png)
