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HM25N10K-VB Product details
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1. HM25N10K-VB Product Introduction
HM25N10K-VB is a high-performance single N-channel MOSFET in TO252 package. The MOSFET can withstand a drain-source voltage (VDS) of up to 100V and supports a gate-source voltage (VGS) of up to ±20V. Its threshold voltage (Vth) is 1.8V, ensuring that it can be turned on at a lower gate voltage. HM25N10K-VB has excellent on-resistance performance, and its on-resistance (RDS(ON)) is 30mΩ (VGS=10V) and 35mΩ (VGS=4.5V) at different gate voltages. The device supports a continuous drain current (ID) of up to 40A and uses Trench technology, which provides efficient switching performance and low conduction losses. HM25N10K-VB is suitable for switching applications requiring high current and high efficiency.
HM25N10K-VB is a high-performance single N-channel MOSFET in TO252 package. The MOSFET can withstand a drain-source voltage (VDS) of up to 100V and supports a gate-source voltage (VGS) of up to ±20V. Its threshold voltage (Vth) is 1.8V, ensuring that it can be turned on at a lower gate voltage. HM25N10K-VB has excellent on-resistance performance, and its on-resistance (RDS(ON)) is 30mΩ (VGS=10V) and 35mΩ (VGS=4.5V) at different gate voltages. The device supports a continuous drain current (ID) of up to 40A and uses Trench technology, which provides efficient switching performance and low conduction losses. HM25N10K-VB is suitable for switching applications requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. HM25N10K-VB Detailed parameter description
1. **Package type**: TO252
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=10V
- 35mΩ @ VGS=4.5V
7. **Continuous drain current (ID)**: 40A
8. **Technology type**: Trench
9. **Maximum power dissipation (Ptot)**: 70W
10. **Operating temperature range**: -55°C to +150°C
11. **Input capacitance (Ciss)**: 500pF
12. **Output capacitance (Coss)**: 100pF
13. **Reverse recovery time (trr)**: 80ns
1. **Package type**: TO252
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=10V
- 35mΩ @ VGS=4.5V
7. **Continuous drain current (ID)**: 40A
8. **Technology type**: Trench
9. **Maximum power dissipation (Ptot)**: 70W
10. **Operating temperature range**: -55°C to +150°C
11. **Input capacitance (Ciss)**: 500pF
12. **Output capacitance (Coss)**: 100pF
13. **Reverse recovery time (trr)**: 80ns
Domain and module applications：
3. Application fields and modules of HM25N10K-VB
The high current handling capability and low on-resistance of HM25N10K-VB MOSFET make it very suitable for various high-power applications. Here are some typical application fields and modules:
1. **Power management**:
- **Application examples**: In high-power power management systems, such as DC-DC converters and power distribution modules, HM25N10K-VB can be used as a high-efficiency switch, reducing switching losses and improving the overall efficiency of the system.
2. **Motor drive**:
- **Application examples**: In motor drive circuits, such as brushless DC motors (BLDC) or stepper motor drivers, HM25N10K-VB can provide stable switching operations, support high current operation, and ensure smooth operation and efficient control of the motor.
3. **Inverter**:
- **Application Examples**: In solar inverter or uninterruptible power supply (UPS) systems, HM25N10K-VB can handle high current loads and high voltage inputs, improving the reliability and power conversion efficiency of the inverter.
4. **Power Amplifier**:
- **Application Examples**: In power amplifier design, such as RF amplifier or audio amplifier, HM25N10K-VB can be used for switch control to ensure the stability and performance of the power amplifier.
5. **Battery Management System**:
- **Application Examples**: In battery management systems, such as battery protection circuits in electric vehicles or large energy storage systems, HM25N10K-VB can effectively manage the battery charging and discharging process and protect the battery from overcurrent and overvoltage damage.
The high current and low on-resistance characteristics of HM25N10K-VB enable it to perform well in a variety of high-power and high-efficiency applications, providing a reliable switching solution for electronic devices.
The high current handling capability and low on-resistance of HM25N10K-VB MOSFET make it very suitable for various high-power applications. Here are some typical application fields and modules:
1. **Power management**:
- **Application examples**: In high-power power management systems, such as DC-DC converters and power distribution modules, HM25N10K-VB can be used as a high-efficiency switch, reducing switching losses and improving the overall efficiency of the system.
2. **Motor drive**:
- **Application examples**: In motor drive circuits, such as brushless DC motors (BLDC) or stepper motor drivers, HM25N10K-VB can provide stable switching operations, support high current operation, and ensure smooth operation and efficient control of the motor.
3. **Inverter**:
- **Application Examples**: In solar inverter or uninterruptible power supply (UPS) systems, HM25N10K-VB can handle high current loads and high voltage inputs, improving the reliability and power conversion efficiency of the inverter.
4. **Power Amplifier**:
- **Application Examples**: In power amplifier design, such as RF amplifier or audio amplifier, HM25N10K-VB can be used for switch control to ensure the stability and performance of the power amplifier.
5. **Battery Management System**:
- **Application Examples**: In battery management systems, such as battery protection circuits in electric vehicles or large energy storage systems, HM25N10K-VB can effectively manage the battery charging and discharging process and protect the battery from overcurrent and overvoltage damage.
The high current and low on-resistance characteristics of HM25N10K-VB enable it to perform well in a variety of high-power and high-efficiency applications, providing a reliable switching solution for electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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