Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
HM25N03D-VB MOSFET Detailed parameter description
- **Package type**: DFN8(5x6)
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology type**: Trench
Domain and module applications:
Applications and module examples
1. **High-efficiency power management**: HM25N03D-VB is suitable for efficient power management systems, especially in applications that need to handle high currents. Its low on-resistance and high current capability enable it to effectively reduce power consumption and improve efficiency in power converters and power modules, and is suitable for devices such as power adapters and battery management systems.
2. **DC-DC converter**: In DC-DC converters, the low on-resistance (7mΩ @ VGS=10V) and high current capability of this MOSFET enable it to significantly improve conversion efficiency and reduce power losses. It is suitable for voltage conversion applications that require high current and high efficiency, such as high-performance power modules and automotive power systems.
3. **Electric vehicles and high-power devices**: HM25N03D-VB can be used in the drive system of electric vehicles and other high-power devices. Its 30V withstand voltage and 80A current capability enable it to cope with the high current requirements in electric vehicles, providing reliable power control and drive performance.
4. **LED drive circuit**: In the LED drive circuit, the high switching speed and low on-resistance of HM25N03D-VB enable it to efficiently drive LEDs and provide stable light output. It is particularly suitable for LED lighting systems such as high-brightness lighting and backlight applications, ensuring stable power supply and high-quality lighting effects.
The low on-resistance and high current capability of HM25N03D-VB MOSFET enable it to perform well in high-efficiency power management, DC-DC converters, electric vehicle drive systems, and LED drive circuits, providing efficient and reliable solutions for a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours