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HM25N03D-VB Product details

Product introduction:

HM25N03D-VB MOSFET Product Introduction

**HM25N03D-VB** is a high-performance N-channel MOSFET in DFN8 (5x6) package. It uses Trench technology and is designed for high current and low on-resistance applications. This MOSFET has a drain-source withstand voltage of 30V and a drain current capability of up to 80A. Its on-resistance is only 7mΩ at VGS=10V and 9mΩ at VGS=4.5V, ensuring efficient switching performance and low power operation. Its 1.7V threshold voltage makes it suitable for low-voltage drive applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 80A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
HM25N03D-VB MOSFET Detailed parameter description

- **Package type**: DFN8(5x6)
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology type**: Trench

Domain and module applications:

Applications and module examples

1. **High-efficiency power management**: HM25N03D-VB is suitable for efficient power management systems, especially in applications that need to handle high currents. Its low on-resistance and high current capability enable it to effectively reduce power consumption and improve efficiency in power converters and power modules, and is suitable for devices such as power adapters and battery management systems.

2. **DC-DC converter**: In DC-DC converters, the low on-resistance (7mΩ @ VGS=10V) and high current capability of this MOSFET enable it to significantly improve conversion efficiency and reduce power losses. It is suitable for voltage conversion applications that require high current and high efficiency, such as high-performance power modules and automotive power systems.

3. **Electric vehicles and high-power devices**: HM25N03D-VB can be used in the drive system of electric vehicles and other high-power devices. Its 30V withstand voltage and 80A current capability enable it to cope with the high current requirements in electric vehicles, providing reliable power control and drive performance.

4. **LED drive circuit**: In the LED drive circuit, the high switching speed and low on-resistance of HM25N03D-VB enable it to efficiently drive LEDs and provide stable light output. It is particularly suitable for LED lighting systems such as high-brightness lighting and backlight applications, ensuring stable power supply and high-quality lighting effects.

The low on-resistance and high current capability of HM25N03D-VB MOSFET enable it to perform well in high-efficiency power management, DC-DC converters, electric vehicle drive systems, and LED drive circuits, providing efficient and reliable solutions for a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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