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HM24N20K-VB Product details
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HM24N20K-VB MOSFET Product Introduction
HM24N20K-VB is a single N-channel MOSFET in TO252 package, designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 200V, and the gate-source voltage (VGS) range is ±20V. The turn-on threshold voltage (Vth) of this MOSFET is 3V, the on-resistance (RDS(ON)) is 55mΩ at VGS=10V, and the maximum drain current (ID) is 30A. HM24N20K-VB adopts Trench technology, has low on-resistance and good switching performance, and is suitable for various power management and switch control applications.
HM24N20K-VB is a single N-channel MOSFET in TO252 package, designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 200V, and the gate-source voltage (VGS) range is ±20V. The turn-on threshold voltage (Vth) of this MOSFET is 3V, the on-resistance (RDS(ON)) is 55mΩ at VGS=10V, and the maximum drain current (ID) is 30A. HM24N20K-VB adopts Trench technology, has low on-resistance and good switching performance, and is suitable for various power management and switch control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HM24N20K-VB MOSFET Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 55mΩ @ VGS=10V
- **Drain current (ID)**: 30A
- **Technology**: Trench
- **Switching characteristics**: Suitable for medium and high voltage and high current switching applications
- **Package**: TO252, suitable for applications with medium power and good heat dissipation requirements
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 55mΩ @ VGS=10V
- **Drain current (ID)**: 30A
- **Technology**: Trench
- **Switching characteristics**: Suitable for medium and high voltage and high current switching applications
- **Package**: TO252, suitable for applications with medium power and good heat dissipation requirements
Domain and module applications：
HM24N20K-VB MOSFET Applicable Fields and Modules
The characteristics of HM24N20K-VB MOSFET enable it to excel in multiple fields and modules:
1. **Power Management System**: HM24N20K-VB can be used as a switching element in power management systems, especially in applications that need to handle higher voltages and currents. Its low on-resistance and high drain current capability enable it to effectively manage power flow and improve the overall efficiency of the system.
2. **DC-DC Converter**: In DC-DC converters, HM24N20K-VB is able to provide stable switching control, suitable for medium and high voltage conversion applications. Its high drain current capability and low on-resistance help improve conversion efficiency and reduce power consumption.
3. **Electric Vehicle**: In the power management system of electric vehicles, HM24N20K-VB can be used as a power switch for battery management and motor drive. Its high voltage tolerance and excellent switching performance are suitable for the needs of high-voltage battery systems and electric drive systems.
4. **Industrial control systems**: In industrial control systems, HM24N20K-VB can be used to switch control power supplies and loads, and is suitable for handling medium and high voltage switching applications. Its high current carrying capacity and low on-resistance can effectively improve the stability and reliability of the system.
5. **Switching power supply (SMPS)**: In switching power supply design, this MOSFET is suitable as a switching element for medium and high voltages. Its high drain current capability and low on-resistance help improve power conversion efficiency and ensure stable power output.
The combination of high voltage handling capability and good switching performance makes the HM24N20K-VB MOSFET an ideal choice for high-performance power management and switching control systems.
The characteristics of HM24N20K-VB MOSFET enable it to excel in multiple fields and modules:
1. **Power Management System**: HM24N20K-VB can be used as a switching element in power management systems, especially in applications that need to handle higher voltages and currents. Its low on-resistance and high drain current capability enable it to effectively manage power flow and improve the overall efficiency of the system.
2. **DC-DC Converter**: In DC-DC converters, HM24N20K-VB is able to provide stable switching control, suitable for medium and high voltage conversion applications. Its high drain current capability and low on-resistance help improve conversion efficiency and reduce power consumption.
3. **Electric Vehicle**: In the power management system of electric vehicles, HM24N20K-VB can be used as a power switch for battery management and motor drive. Its high voltage tolerance and excellent switching performance are suitable for the needs of high-voltage battery systems and electric drive systems.
4. **Industrial control systems**: In industrial control systems, HM24N20K-VB can be used to switch control power supplies and loads, and is suitable for handling medium and high voltage switching applications. Its high current carrying capacity and low on-resistance can effectively improve the stability and reliability of the system.
5. **Switching power supply (SMPS)**: In switching power supply design, this MOSFET is suitable as a switching element for medium and high voltages. Its high drain current capability and low on-resistance help improve power conversion efficiency and ensure stable power output.
The combination of high voltage handling capability and good switching performance makes the HM24N20K-VB MOSFET an ideal choice for high-performance power management and switching control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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