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HM2302BJR-VB Product details
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1. HM2302BJR-VB Product Introduction
HM2302BJR-VB is a highly efficient single-channel N-type MOSFET in a compact SOT723-3 package, designed for low-voltage, high-performance applications. The drain-source breakdown voltage (VDS) of this MOSFET is 20V, which is suitable for low-voltage power management and signal processing. Its gate-source voltage (VGS) range is ±20V, which can withstand large gate voltages. The threshold voltage (Vth) is only 0.45V, ensuring that the MOSFET can start to conduct at a lower gate voltage. At VGS of 4.5V, its on-resistance (RDS(ON)) is 337.5mΩ, and at VGS of 10V, RDS(ON) is 270mΩ. The maximum drain current (ID) is 0.65A, making it suitable for low-power switching applications. Manufactured using Trench technology, this MOSFET has high efficiency and stability.
HM2302BJR-VB is a highly efficient single-channel N-type MOSFET in a compact SOT723-3 package, designed for low-voltage, high-performance applications. The drain-source breakdown voltage (VDS) of this MOSFET is 20V, which is suitable for low-voltage power management and signal processing. Its gate-source voltage (VGS) range is ±20V, which can withstand large gate voltages. The threshold voltage (Vth) is only 0.45V, ensuring that the MOSFET can start to conduct at a lower gate voltage. At VGS of 4.5V, its on-resistance (RDS(ON)) is 337.5mΩ, and at VGS of 10V, RDS(ON) is 270mΩ. The maximum drain current (ID) is 0.65A, making it suitable for low-power switching applications. Manufactured using Trench technology, this MOSFET has high efficiency and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N | 20V | 0.45V | 0.65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT723-3 | Single-N |
2. HM2302BJR-VB Detailed parameter description
- **Package type**: SOT723-3
- **Channel configuration**: Single N type
- **Drain-source breakdown voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.45V
- **On-resistance (RDS(ON))**:
- 337.5mΩ @ VGS=4.5V
- 270mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.65A
- **Technology**: Trench
- **Package type**: SOT723-3
- **Channel configuration**: Single N type
- **Drain-source breakdown voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.45V
- **On-resistance (RDS(ON))**:
- 337.5mΩ @ VGS=4.5V
- 270mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.65A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples of HM2302BJR-VB
**1. Low voltage power management **
HM2302BJR-VB is suitable for low voltage power management systems, such as power switches in portable devices and consumer electronics. Its 20V drain-source breakdown voltage and low on-resistance enable it to efficiently handle the switching operation of low voltage power supplies and improve the energy efficiency of the system.
**2. Portable devices **
In portable devices (such as smartphones and tablets), HM2302BJR-VB can be used for power switches and current limiting circuits. Its low threshold voltage (0.45V) and compact SOT723 package make it very suitable for space-limited applications, helping to optimize battery use and extend device usage time.
**3. Signal switch **
This MOSFET is also suitable for low voltage signal switching applications, such as signal selection and routing in audio and video equipment. Its low RDS(ON) characteristic reduces signal loss and ensures high signal integrity.
**4. Low-power switching circuits**
HM2302BJR-VB can be used in various low-power switching circuits, such as current protection and load switching. These applications include LED drivers and low-power circuits, where its high efficiency and stability ensure reliable operation of the circuits.
The low voltage and high efficiency characteristics of HM2302BJR-VB make it excellent in portable devices, power management, signal switching and low-power switching circuits, providing efficient and reliable solutions.
**1. Low voltage power management **
HM2302BJR-VB is suitable for low voltage power management systems, such as power switches in portable devices and consumer electronics. Its 20V drain-source breakdown voltage and low on-resistance enable it to efficiently handle the switching operation of low voltage power supplies and improve the energy efficiency of the system.
**2. Portable devices **
In portable devices (such as smartphones and tablets), HM2302BJR-VB can be used for power switches and current limiting circuits. Its low threshold voltage (0.45V) and compact SOT723 package make it very suitable for space-limited applications, helping to optimize battery use and extend device usage time.
**3. Signal switch **
This MOSFET is also suitable for low voltage signal switching applications, such as signal selection and routing in audio and video equipment. Its low RDS(ON) characteristic reduces signal loss and ensures high signal integrity.
**4. Low-power switching circuits**
HM2302BJR-VB can be used in various low-power switching circuits, such as current protection and load switching. These applications include LED drivers and low-power circuits, where its high efficiency and stability ensure reliable operation of the circuits.
The low voltage and high efficiency characteristics of HM2302BJR-VB make it excellent in portable devices, power management, signal switching and low-power switching circuits, providing efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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