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HM2300PR-VB Product details
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HM2300PR-VB MOSFET Product Introduction
**HM2300PR-VB** is a high-performance N-channel MOSFET in SOT89 package, designed for medium and low voltage applications. Its technical basis is Trench technology, which provides excellent switching performance and low on-resistance. This MOSFET has a drain-source withstand voltage of 30V and a drain current capability of up to 6.8A. Its threshold voltage is 1.7V, enabling it to operate stably under low voltage drive. The low on-resistance (22mΩ @ VGS=4.5V) of HM2300PR-VB ensures efficient power transmission and is suitable for a variety of power management applications requiring high efficiency and low power consumption.
**HM2300PR-VB** is a high-performance N-channel MOSFET in SOT89 package, designed for medium and low voltage applications. Its technical basis is Trench technology, which provides excellent switching performance and low on-resistance. This MOSFET has a drain-source withstand voltage of 30V and a drain current capability of up to 6.8A. Its threshold voltage is 1.7V, enabling it to operate stably under low voltage drive. The low on-resistance (22mΩ @ VGS=4.5V) of HM2300PR-VB ensures efficient power transmission and is suitable for a variety of power management applications requiring high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
HM2300PR-VB MOSFET Detailed parameter description
- **Package type**: SOT89
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Drain current (ID)**: 6.8A
- **Technology type**: Trench
- **Package type**: SOT89
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Drain current (ID)**: 6.8A
- **Technology type**: Trench
Domain and module applications：
Applications and Module Examples
1. **Low Voltage Power Management**: The low on-resistance and stable switching performance of the HM2300PR-VB make it an ideal choice for low voltage power management systems. For example, in portable electronic devices such as smartphones and handheld devices, it can effectively manage power, reduce energy loss, and extend the battery life of the device.
2. **DC-DC Converter**: Due to its excellent switching efficiency and low on-resistance, the HM2300PR-VB is suitable for use in DC-DC converters. In these converters, it helps improve conversion efficiency, reduce power consumption and heat generation, and is suitable for various voltage conversion modules such as battery chargers and power adapters.
3. **LED Drive Circuit**: In LED drive circuits, the high switching speed and low on-resistance of this MOSFET enable it to stably drive LEDs, providing uniform and stable light output. For example, in power management for LED lighting systems, the HM2300PR-VB can ensure efficient energy transfer and reliability.
4. **Consumer Electronics**: In consumer electronics, such as tablets, laptops, etc., the HM2300PR-VB can be used for efficient switching power management and control circuits. Its low threshold voltage (1.7V) allows operation at lower voltages, improving the overall performance and efficiency of the system.
The low on-resistance and high current capability of the HM2300PR-VB MOSFET make it excel in low-voltage power management, DC-DC converters, LED drive circuits, and consumer electronics, providing a reliable power management solution.
1. **Low Voltage Power Management**: The low on-resistance and stable switching performance of the HM2300PR-VB make it an ideal choice for low voltage power management systems. For example, in portable electronic devices such as smartphones and handheld devices, it can effectively manage power, reduce energy loss, and extend the battery life of the device.
2. **DC-DC Converter**: Due to its excellent switching efficiency and low on-resistance, the HM2300PR-VB is suitable for use in DC-DC converters. In these converters, it helps improve conversion efficiency, reduce power consumption and heat generation, and is suitable for various voltage conversion modules such as battery chargers and power adapters.
3. **LED Drive Circuit**: In LED drive circuits, the high switching speed and low on-resistance of this MOSFET enable it to stably drive LEDs, providing uniform and stable light output. For example, in power management for LED lighting systems, the HM2300PR-VB can ensure efficient energy transfer and reliability.
4. **Consumer Electronics**: In consumer electronics, such as tablets, laptops, etc., the HM2300PR-VB can be used for efficient switching power management and control circuits. Its low threshold voltage (1.7V) allows operation at lower voltages, improving the overall performance and efficiency of the system.
The low on-resistance and high current capability of the HM2300PR-VB MOSFET make it excel in low-voltage power management, DC-DC converters, LED drive circuits, and consumer electronics, providing a reliable power management solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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