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HM20N65A-VB Product details

Product introduction:

HM20N65A-VB MOSFET Product Introduction

HM20N65A-VB is a single N-channel MOSFET in TO3P package, designed for high voltage and medium current switching applications. Its maximum drain-source voltage (VDS) is 650V, and the gate-source voltage (VGS) range can reach ±30V. The turn-on threshold voltage (Vth) of this MOSFET is 3.5V, the on-resistance (RDS(ON)) is 420mΩ at VGS=10V, and the maximum drain current (ID) is 11A. HM20N65A-VB adopts SJ_Multi-EPI technology, has excellent high voltage handling capability and stable switching characteristics, and is very suitable for applications requiring high voltage and stability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 650V 3.5V 11A 420mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 650V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 650V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
HM20N65A-VB MOSFET detailed parameter description

- **Package**: TO3P
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 420mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Switching characteristics**: Suitable for high voltage and medium current switching applications
- **Package**: TO3P, suitable for applications with high power and good heat dissipation requirements

Domain and module applications:

HM20N65A-VB MOSFET Applicable Fields and Modules

The design features and performance of HM20N65A-VB MOSFET make it have a wide range of application potential in multiple fields and modules:

1. **High-voltage power converter**: In high-voltage power converter applications, HM20N65A-VB can handle voltages up to 650V as a switching element. It is suitable for AC-DC converters and DC-DC converters, which can effectively improve power conversion efficiency and stability.

2. **Power inverter**: In power inverters, such as solar inverters, HM20N65A-VB is able to convert high-voltage DC power to AC power. Its high voltage tolerance and stable switching characteristics make it suitable for inverter applications that handle high power.

3. **Industrial power management**: Used in industrial power management systems, HM20N65A-VB is able to handle high voltage and medium current switching requirements. It is suitable for switch control and power protection in power modules, improving the overall performance and stability of the system.

4. **Switching Power Supply (SMPS)**: In the switching power supply system, this MOSFET is suitable for high-voltage switching operations, can efficiently manage power conversion, provide stable power output and efficient switching performance.

5. **High-voltage Switching Applications**: HM20N65A-VB performs well in high-voltage switching applications, can handle switching operations in high-voltage environments, and is suitable for various high-voltage control and protection circuits.

The high voltage handling capability and excellent switching performance of the HM20N65A-VB MOSFET make it an ideal choice for high-performance power supplies and power control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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