HM20N60A-VB Product details
Product introduction:
**HM20N60A-VB** is a high voltage, high power N-channel MOSFET in TO247 package. With a maximum drain-source voltage (VDS) of 650V, this MOSFET is suitable for high voltage applications. Using SJ_Multi-EPI technology, this device combines excellent conduction performance with high current carrying capacity, and is particularly suitable for applications requiring high voltage and high power switching. Its lower on-resistance and higher current capability make it an ideal choice in the field of power management and power conversion.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Model**: HM20N60A-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 300mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
1. **High voltage power converter**: The HM20N60A-VB can be used in high voltage power converters such as switch mode power supplies (SMPS) and inverters. Its high voltage withstand capability of 650V and 300mΩ on-resistance enable it to efficiently handle high power loads, optimize power conversion efficiency, and ensure the stability of the power system.
2. **Power amplifier**: In power amplifier applications, such as audio amplifiers and RF amplifiers, the HM20N60A-VB can be used as the main switching element. Its high voltage and current handling capabilities make it suitable for use in high power amplifier modules, ensuring the performance and stability of the amplifier.
3. **Motor drive system**: This MOSFET can be used as a switching element in motor drive systems, such as electric vehicle drive systems or industrial motor control. Its high current carrying capacity and high voltage handling capabilities make it suitable for controlling the start-up, operation and regulation of motors, ensuring that the system works efficiently and stably.
4. **Industrial Power Management**: In industrial power systems, HM20N60A-VB can be used as a switching element in power management and protection circuits. Its high voltage tolerance and high current capability enable it to operate stably in industrial environments, ensuring the safety and reliability of equipment.
5. **Battery Management System**: In battery management systems, such as battery management or energy storage systems for electric vehicles, HM20N60A-VB can be used for battery protection and control. It is able to handle the high voltage and current generated during battery charging and discharging, improving the safety and operating efficiency of the system.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image