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HM1N60F-VB Product details
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HM1N60F-VB MOSFET Product Introduction
**HM1N60F-VB** is a high voltage single N-channel MOSFET in TO220F package. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, this MOSFET is designed for high voltage environments. Its threshold voltage (Vth) is 3.5V, on-resistance (RDS(ON)) is 320mΩ @ VGS=10V, and maximum drain current (ID) is 20A. HM1N60F-VB uses planar technology and is suitable for use in high voltage load switching and control applications to ensure system reliability and performance.
**HM1N60F-VB** is a high voltage single N-channel MOSFET in TO220F package. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, this MOSFET is designed for high voltage environments. Its threshold voltage (Vth) is 3.5V, on-resistance (RDS(ON)) is 320mΩ @ VGS=10V, and maximum drain current (ID) is 20A. HM1N60F-VB uses planar technology and is suitable for use in high voltage load switching and control applications to ensure system reliability and performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
HM1N60F-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Plannar
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Plannar
Domain and module applications：
Application fields and module examples
HM1N60F-VB MOSFET is suitable for the following fields and modules due to its high voltage tolerance and stable performance:
1. **Power converter**: In high voltage power converters, such as AC-DC converters and DC-DC converters, HM1N60F-VB can effectively handle high voltage loads, provide stable switching control, and achieve efficient power conversion.
2. **Industrial electrical equipment**: In industrial automation and control systems, this MOSFET is suitable for switching and current control of high voltage loads, such as motor drive, high voltage load switching, and power protection.
3. **Automotive electronics**: In automotive electrical systems, such as battery management systems (BMS) and high voltage power distribution modules, HM1N60F-VB is able to handle high voltage and medium current, ensuring the stability and efficiency of automotive electronic systems.
4. **LED lighting system**: In high voltage LED drive circuits, HM1N60F-VB can be used to drive and control high voltage LED lamps, ensuring the reliability and brightness stability of the LED system.
5. **High voltage switch**: In applications that require high voltage switching and protection, such as power switches and power protection circuits, HM1N60F-VB provides stable high voltage handling capabilities and reliable switching performance.
Due to its high voltage tolerance and good conduction characteristics, HM1N60F-VB performs well in high voltage and high power applications, providing a reliable solution for a variety of high voltage loads and switching needs.
HM1N60F-VB MOSFET is suitable for the following fields and modules due to its high voltage tolerance and stable performance:
1. **Power converter**: In high voltage power converters, such as AC-DC converters and DC-DC converters, HM1N60F-VB can effectively handle high voltage loads, provide stable switching control, and achieve efficient power conversion.
2. **Industrial electrical equipment**: In industrial automation and control systems, this MOSFET is suitable for switching and current control of high voltage loads, such as motor drive, high voltage load switching, and power protection.
3. **Automotive electronics**: In automotive electrical systems, such as battery management systems (BMS) and high voltage power distribution modules, HM1N60F-VB is able to handle high voltage and medium current, ensuring the stability and efficiency of automotive electronic systems.
4. **LED lighting system**: In high voltage LED drive circuits, HM1N60F-VB can be used to drive and control high voltage LED lamps, ensuring the reliability and brightness stability of the LED system.
5. **High voltage switch**: In applications that require high voltage switching and protection, such as power switches and power protection circuits, HM1N60F-VB provides stable high voltage handling capabilities and reliable switching performance.
Due to its high voltage tolerance and good conduction characteristics, HM1N60F-VB performs well in high voltage and high power applications, providing a reliable solution for a variety of high voltage loads and switching needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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