HM18P10L-VB Product details
Product introduction:
**HM18P10L-VB** is a high-performance P-channel MOSFET in TO251 package, designed for medium and high voltage applications. It has a maximum drain-source voltage of 100V and a maximum drain current of up to -16A. This MOSFET is manufactured using Trench technology, which provides low on-resistance and stable performance, and is particularly suitable for switching circuits that require high efficiency and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
- **Model**: HM18P10L-VB
- **Package**: TO251
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -16A
- **Technology**: Trench
Domain and module applications:
1. **Power management**
HM18P10L-VB is suitable for various power management systems, especially those that require high efficiency and low power consumption. For example, in DC-DC converters and switching power supplies, this MOSFET can effectively reduce switching losses and improve the overall efficiency of the system.
2. **Load switch**
This MOSFET performs well in load switch applications and is suitable for high-power load control. The low on-resistance of HM18P10L-VB can reduce power consumption and heat generation, and is suitable for load switch scenarios such as motor control, high-power lighting systems and electric heating equipment.
3. **Battery protection and management**
In battery protection and management systems, HM18P10L-VB can be used as a battery switch and protection circuit. Its high withstand voltage and low on-resistance characteristics help improve the efficiency of battery management systems and are suitable for battery protection modules in electric vehicles and energy storage systems.
4. **Automotive Electronic Systems**
In automotive electronic systems, the HM18P10L-VB can provide reliable switching control, such as automotive lights, window lifts and power seats. Its high withstand voltage and stable performance ensure long-term reliable operation in the automotive environment.
5. **Inverters and Power Converters**
This MOSFET can also be used in inverters and power converters, especially in situations where high current and high efficiency are required. Its low on-resistance and high withstand voltage can provide stable switching performance and is suitable for various power conversion devices.
The high withstand voltage and low on-resistance of the HM18P10L-VB make it perform well in applications such as power management, load switching, battery protection, automotive electronics and power conversion, providing efficient and reliable solutions.
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