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HM18N50F-VB Product details
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1. HM18N50F-VB Product Introduction
HM18N50F-VB is a high-voltage single N-channel MOSFET in TO220F package, designed for medium and high voltage applications. This MOSFET has a drain-source voltage (VDS) of 550V, making it suitable for operation in high voltage environments. Its gate-source voltage (VGS) is up to ±30V, and its threshold voltage (Vth) is 3V, ensuring stable switching at lower gate voltages. The on-resistance (RDS(ON)) of the HM18N50F-VB is 260mΩ at VGS=10V, with low conduction losses. The device supports a continuous drain current (ID) of up to 18A and uses Plannar technology, which is suitable for applications requiring medium current and high voltage.
HM18N50F-VB is a high-voltage single N-channel MOSFET in TO220F package, designed for medium and high voltage applications. This MOSFET has a drain-source voltage (VDS) of 550V, making it suitable for operation in high voltage environments. Its gate-source voltage (VGS) is up to ±30V, and its threshold voltage (Vth) is 3V, ensuring stable switching at lower gate voltages. The on-resistance (RDS(ON)) of the HM18N50F-VB is 260mΩ at VGS=10V, with low conduction losses. The device supports a continuous drain current (ID) of up to 18A and uses Plannar technology, which is suitable for applications requiring medium current and high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description of HM18N50F-VB
1. **Package type**: TO220F
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 550V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 260mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 18A
8. **Technology type**: Plannar
9. **Breakdown voltage (BVDSS)**: 550V
10. **Maximum power dissipation (Ptot)**: 100W
11. **Operating temperature range**: -55°C to +150°C
12. **Input capacitance (Ciss)**: 1800pF
13. **Output capacitance (Coss)**: 300pF
14. **Reverse recovery time (trr)**: 150ns
1. **Package type**: TO220F
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 550V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 260mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 18A
8. **Technology type**: Plannar
9. **Breakdown voltage (BVDSS)**: 550V
10. **Maximum power dissipation (Ptot)**: 100W
11. **Operating temperature range**: -55°C to +150°C
12. **Input capacitance (Ciss)**: 1800pF
13. **Output capacitance (Coss)**: 300pF
14. **Reverse recovery time (trr)**: 150ns
Domain and module applications：
3. Application fields and modules of HM18N50F-VB
The high voltage tolerance and medium current handling capability of HM18N50F-VB MOSFET make it very useful in multiple application fields. Here are some typical application fields and modules:
1. **High voltage power switch**: In high voltage power management systems, HM18N50F-VB can effectively handle high voltage and medium current, suitable for switching power supplies and power conversion modules, ensuring stable power output and efficient energy conversion.
2. **Inverter**: In photovoltaic inverters and other high voltage inverters, this MOSFET can handle voltages up to 550V, provide efficient power conversion and stable output performance, and is suitable for inverter designs that require high voltage tolerance.
3. **Battery charger**: HM18N50F-VB is suitable for high voltage battery chargers, especially in the charging system of high voltage battery packs, and can provide reliable switch control and protection functions to ensure the safety and efficiency of the charging process.
4. **Industrial power systems**: In industrial power systems, such as high-voltage power regulation and control circuits, this MOSFET can handle high voltages and large currents, providing stable and efficient power solutions for industrial applications.
5. **Power amplifier**: This MOSFET is also suitable for use in high-voltage power amplifiers, which can support high-voltage operation and provide stable power amplification functions, suitable for various high-power electronic devices.
These characteristics make the HM18N50F-VB MOSFET perform well in high-voltage applications and provide a reliable solution for various power electronic devices.
The high voltage tolerance and medium current handling capability of HM18N50F-VB MOSFET make it very useful in multiple application fields. Here are some typical application fields and modules:
1. **High voltage power switch**: In high voltage power management systems, HM18N50F-VB can effectively handle high voltage and medium current, suitable for switching power supplies and power conversion modules, ensuring stable power output and efficient energy conversion.
2. **Inverter**: In photovoltaic inverters and other high voltage inverters, this MOSFET can handle voltages up to 550V, provide efficient power conversion and stable output performance, and is suitable for inverter designs that require high voltage tolerance.
3. **Battery charger**: HM18N50F-VB is suitable for high voltage battery chargers, especially in the charging system of high voltage battery packs, and can provide reliable switch control and protection functions to ensure the safety and efficiency of the charging process.
4. **Industrial power systems**: In industrial power systems, such as high-voltage power regulation and control circuits, this MOSFET can handle high voltages and large currents, providing stable and efficient power solutions for industrial applications.
5. **Power amplifier**: This MOSFET is also suitable for use in high-voltage power amplifiers, which can support high-voltage operation and provide stable power amplification functions, suitable for various high-power electronic devices.
These characteristics make the HM18N50F-VB MOSFET perform well in high-voltage applications and provide a reliable solution for various power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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