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HM18N50A-VB Product details
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1. HM18N50A-VB Product Introduction
HM18N50A-VB is a single-channel N-type MOSFET in TO247 package, designed for high voltage and high current applications. This MOSFET provides a drain-source breakdown voltage (VDS) of 500V and can operate stably in a high voltage environment. Its gate-source voltage (VGS) is ±30V and its threshold voltage (Vth) is 3.8V. When VGS is 10V, its on-resistance (RDS(ON)) is 80mΩ and its maximum drain current (ID) is 40A. The device is manufactured using SJ_Multi-EPI technology and is suitable for applications requiring high voltage and high current handling.
HM18N50A-VB is a single-channel N-type MOSFET in TO247 package, designed for high voltage and high current applications. This MOSFET provides a drain-source breakdown voltage (VDS) of 500V and can operate stably in a high voltage environment. Its gate-source voltage (VGS) is ±30V and its threshold voltage (Vth) is 3.8V. When VGS is 10V, its on-resistance (RDS(ON)) is 80mΩ and its maximum drain current (ID) is 40A. The device is manufactured using SJ_Multi-EPI technology and is suitable for applications requiring high voltage and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. HM18N50A-VB Detailed parameter description
- **Package type**: TO247
- **Channel configuration**: Single N type
- **Drain-source breakdown voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO247
- **Channel configuration**: Single N type
- **Drain-source breakdown voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
3. Application fields and module examples of HM18N50A-VB
**1. Power converters **
HM18N50A-VB is suitable for high voltage power converters, especially AC-DC and DC-DC converters. Its 500V drain-source breakdown voltage and 40A drain current capability enable it to efficiently handle high voltage and high current loads in the power conversion process.
**2. Industrial motor drive **
In industrial motor drive systems, HM18N50A-VB can be used as a power switch. Its high current capability and medium on-resistance ensure high efficiency and stability in motor drive, and is suitable for various industrial automation equipment and mechanical systems.
**3. Uninterruptible power supply (UPS) **
This MOSFET can be used in uninterruptible power supply (UPS) systems to manage high voltage DC or AC. Its high voltage tolerance and high current handling capabilities ensure the reliability and stability of UPS systems under high load conditions.
**4. High-voltage lighting systems**
HM18N50A-VB is suitable for high-voltage lighting control systems, such as large industrial lighting and street lighting. Its high voltage and high current characteristics enable it to effectively control high-voltage lamps and provide stable switching control.
The design of HM18N50A-VB makes it particularly suitable for application scenarios that require high voltage and high current switching, such as power converters, industrial motor drives, uninterruptible power supplies (UPS) and high-voltage lighting systems, and can provide stable and efficient performance under these high load conditions.
**1. Power converters **
HM18N50A-VB is suitable for high voltage power converters, especially AC-DC and DC-DC converters. Its 500V drain-source breakdown voltage and 40A drain current capability enable it to efficiently handle high voltage and high current loads in the power conversion process.
**2. Industrial motor drive **
In industrial motor drive systems, HM18N50A-VB can be used as a power switch. Its high current capability and medium on-resistance ensure high efficiency and stability in motor drive, and is suitable for various industrial automation equipment and mechanical systems.
**3. Uninterruptible power supply (UPS) **
This MOSFET can be used in uninterruptible power supply (UPS) systems to manage high voltage DC or AC. Its high voltage tolerance and high current handling capabilities ensure the reliability and stability of UPS systems under high load conditions.
**4. High-voltage lighting systems**
HM18N50A-VB is suitable for high-voltage lighting control systems, such as large industrial lighting and street lighting. Its high voltage and high current characteristics enable it to effectively control high-voltage lamps and provide stable switching control.
The design of HM18N50A-VB makes it particularly suitable for application scenarios that require high voltage and high current switching, such as power converters, industrial motor drives, uninterruptible power supplies (UPS) and high-voltage lighting systems, and can provide stable and efficient performance under these high load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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