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HM18N40A-VB Product details
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HM18N40A-VB MOSFET Product Introduction
**HM18N40A-VB** is a high-voltage single N-channel MOSFET in a TO3P package. With a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, this MOSFET is suitable for high voltage environments. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 280mΩ @ VGS=10V, and the maximum drain current (ID) is 15A. This MOSFET uses SJ_Multi-EPI technology, which can provide stable performance at high voltage and is suitable for various application scenarios requiring high voltage tolerance.
**HM18N40A-VB** is a high-voltage single N-channel MOSFET in a TO3P package. With a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, this MOSFET is suitable for high voltage environments. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 280mΩ @ VGS=10V, and the maximum drain current (ID) is 15A. This MOSFET uses SJ_Multi-EPI technology, which can provide stable performance at high voltage and is suitable for various application scenarios requiring high voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
HM18N40A-VB Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 280mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
HM18N40A-VB MOSFET is suitable for the following fields and modules due to its high voltage tolerance and stable performance:
1. **Power converter**: In high voltage power converters, such as AC-DC converters and DC-DC converters, HM18N40A-VB can effectively handle high voltage loads, provide stable switching control and high efficiency conversion.
2. **Industrial electrical equipment**: In industrial automation and control systems, this MOSFET can be used for high voltage load switching and current control, such as motor drive, high voltage load switching and industrial power protection.
3. **Automotive electronics**: In automotive electrical systems, such as battery management systems (BMS) and power distribution modules, HM18N40A-VB can handle high voltage and medium current, ensuring the stability and efficiency of automotive electronic systems.
4. **LED lighting system**: In high-voltage LED drive circuits, HM18N40A-VB can be used to drive and control high-voltage LED lamps, ensuring the reliability and brightness stability of the LED system.
5. **High voltage switch**: In applications that require high-voltage switching and protection, such as power switches and power protection circuits, HM18N40A-VB provides stable high-voltage handling capabilities and reliable switching performance.
With its high voltage tolerance and good conduction characteristics, HM18N40A-VB can perform well in a variety of high-voltage and high-power applications, ensuring system reliability and efficiency.
HM18N40A-VB MOSFET is suitable for the following fields and modules due to its high voltage tolerance and stable performance:
1. **Power converter**: In high voltage power converters, such as AC-DC converters and DC-DC converters, HM18N40A-VB can effectively handle high voltage loads, provide stable switching control and high efficiency conversion.
2. **Industrial electrical equipment**: In industrial automation and control systems, this MOSFET can be used for high voltage load switching and current control, such as motor drive, high voltage load switching and industrial power protection.
3. **Automotive electronics**: In automotive electrical systems, such as battery management systems (BMS) and power distribution modules, HM18N40A-VB can handle high voltage and medium current, ensuring the stability and efficiency of automotive electronic systems.
4. **LED lighting system**: In high-voltage LED drive circuits, HM18N40A-VB can be used to drive and control high-voltage LED lamps, ensuring the reliability and brightness stability of the LED system.
5. **High voltage switch**: In applications that require high-voltage switching and protection, such as power switches and power protection circuits, HM18N40A-VB provides stable high-voltage handling capabilities and reliable switching performance.
With its high voltage tolerance and good conduction characteristics, HM18N40A-VB can perform well in a variety of high-voltage and high-power applications, ensuring system reliability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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