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HM16N50F-VB Product details
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HM16N50F-VB Product Introduction
**HM16N50F-VB** is a high voltage, high current carrying capacity N-channel MOSFET in TO220F package. Its maximum drain-source voltage (VDS) is 550V, suitable for high voltage applications. It has good switching characteristics and low on-resistance, suitable for power management, power conversion and high power switching applications.
**HM16N50F-VB** is a high voltage, high current carrying capacity N-channel MOSFET in TO220F package. Its maximum drain-source voltage (VDS) is 550V, suitable for high voltage applications. It has good switching characteristics and low on-resistance, suitable for power management, power conversion and high power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: HM16N50F-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 18A
- **Technology**: Planar technology (Planar)
- **Model**: HM16N50F-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 18A
- **Technology**: Planar technology (Planar)
Domain and module applications：
Applications and module examples
1. **Power management**: In power converters and inverters, HM16N50F-VB can be used as the main switching element. Its high voltage and high current carrying capacity enable it to handle high power loads, while its low on-resistance helps improve energy efficiency and reduce power losses.
2. **Power amplifier**: In high power amplifier designs, this MOSFET can operate stably at high voltage and high current, making it suitable for power amplifier modules that require high voltage tolerance, ensuring the reliability and stability of the amplifier at high power output.
3. **Motor drive**: In motor drive circuits, HM16N50F-VB can be used as a switching element in motor control. It can handle the high voltage and high current generated during motor startup and operation, and is suitable for motor control systems that require high power drive.
4. **Industrial Automation**: In industrial automation systems, such as automated production lines and robot control, the high voltage and current characteristics of this MOSFET enable it to work reliably in harsh industrial environments and meet the requirements of high-power control.
5. **Battery Management System**: In battery management systems, HM16N50F-VB can be used for battery protection and management, including current switching during charging and discharging, helping to improve system safety and efficiency.
1. **Power management**: In power converters and inverters, HM16N50F-VB can be used as the main switching element. Its high voltage and high current carrying capacity enable it to handle high power loads, while its low on-resistance helps improve energy efficiency and reduce power losses.
2. **Power amplifier**: In high power amplifier designs, this MOSFET can operate stably at high voltage and high current, making it suitable for power amplifier modules that require high voltage tolerance, ensuring the reliability and stability of the amplifier at high power output.
3. **Motor drive**: In motor drive circuits, HM16N50F-VB can be used as a switching element in motor control. It can handle the high voltage and high current generated during motor startup and operation, and is suitable for motor control systems that require high power drive.
4. **Industrial Automation**: In industrial automation systems, such as automated production lines and robot control, the high voltage and current characteristics of this MOSFET enable it to work reliably in harsh industrial environments and meet the requirements of high-power control.
5. **Battery Management System**: In battery management systems, HM16N50F-VB can be used for battery protection and management, including current switching during charging and discharging, helping to improve system safety and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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