HM150N03D-VB Product details
Product introduction:
**HM150N03D-VB** is a high-performance N-channel MOSFET in a TO263 package, designed for low-voltage, high-current applications. This MOSFET has extremely low on-resistance and excellent current handling capabilities, suitable for high-efficiency switching control circuits. It can withstand drain-source voltages up to 30V and support continuous currents up to 150A. Using Trench technology, this MOSFET combines low on-resistance with high current density, making it ideal for applications requiring high performance and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: HM150N03D-VB
- **Package**: TO263
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications:
1. **High-efficiency power management**
The low on-resistance and high current handling capability of HM150N03D-VB make it an ideal choice for high-efficiency power management systems. For example, in DC-DC converters, it can effectively reduce switching losses and significantly improve conversion efficiency, making it very suitable for power modules used in computers, servers, and telecommunications equipment.
2. **Motor drive system**
This MOSFET performs well in motor drive applications, especially motor drive scenarios that require high current, such as drive systems in electric vehicles, motor control in industrial automation, etc. Its low on-resistance can reduce heat loss and ensure stable operation of the motor under high load.
3. **Load switch application**
In high-current load switching, such as switch control in power tools and industrial equipment, HM150N03D-VB can achieve switch control of high-current loads with extremely low conduction losses, suitable for power tools, UPS systems, and other occasions requiring high-efficiency switching.
4. **Automotive Electronic Systems**
HM150N03D-VB is suitable for high current switching applications in automotive electronic systems, such as automotive lighting control systems, electric seat adjustments, electric window controls, etc. Its high current carrying capacity and low on-resistance can improve the efficiency and reliability of automotive electronic systems.
5. **Battery Management System**
In battery management systems, this MOSFET can be used to control the charging and discharging process of large currents. Its high efficiency and low power consumption can significantly extend battery life and is suitable for battery management modules in new energy vehicles and energy storage systems.
The low on-resistance and high current handling capability of HM150N03D-VB enable it to excel in a variety of high-performance applications, especially in high current scenarios such as power management, motor drive and load switching, providing a reliable solution.
Technical support:
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