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HM13P10K-VB Product details
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1. HM13P10K-VB Product Introduction
HM13P10K-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high voltage and medium current applications. With a drain-source voltage (VDS) of -100V, this MOSFET is very suitable for use in high voltage reverse switching applications. Its gate-source voltage (VGS) is up to ±20V and its threshold voltage (Vth) is -2V, enabling stable operation at lower gate voltages. The device has an on-resistance (RDS(ON)) of 120mΩ at VGS=4.5V and 100mΩ at VGS=10V, with good conduction performance. HM13P10K-VB supports a continuous drain current (ID) of up to -16A and uses Trench technology, which significantly reduces on-resistance while providing excellent switching speed and efficiency.
HM13P10K-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high voltage and medium current applications. With a drain-source voltage (VDS) of -100V, this MOSFET is very suitable for use in high voltage reverse switching applications. Its gate-source voltage (VGS) is up to ±20V and its threshold voltage (Vth) is -2V, enabling stable operation at lower gate voltages. The device has an on-resistance (RDS(ON)) of 120mΩ at VGS=4.5V and 100mΩ at VGS=10V, with good conduction performance. HM13P10K-VB supports a continuous drain current (ID) of up to -16A and uses Trench technology, which significantly reduces on-resistance while providing excellent switching speed and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
II. Detailed parameter description of HM13P10K-VB
1. **Package type**: TO252
2. **Channel configuration**: Single P-channel
3. **Drain-source voltage (VDS)**: -100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: -2V
6. **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
7. **Continuous drain current (ID)**: -16A
8. **Technology type**: Trench
9. **Breakdown voltage (BVDSS)**: -100V
10. **Maximum power dissipation (Ptot)**: 60W
11. **Operating temperature range**: -55°C to +150°C
12. **Input capacitance (Ciss)**: 1300pF
13. **Output capacitance (Coss)**: 180pF
14. **Reverse recovery time (trr)**: 200ns
1. **Package type**: TO252
2. **Channel configuration**: Single P-channel
3. **Drain-source voltage (VDS)**: -100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: -2V
6. **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
7. **Continuous drain current (ID)**: -16A
8. **Technology type**: Trench
9. **Breakdown voltage (BVDSS)**: -100V
10. **Maximum power dissipation (Ptot)**: 60W
11. **Operating temperature range**: -55°C to +150°C
12. **Input capacitance (Ciss)**: 1300pF
13. **Output capacitance (Coss)**: 180pF
14. **Reverse recovery time (trr)**: 200ns
Domain and module applications：
3. Application fields and modules of HM13P10K-VB
The high-voltage P-channel characteristics and medium current handling capability of HM13P10K-VB MOSFET give it advantages in a variety of application scenarios. The following are some typical application fields and modules:
1. **Power switch circuit**: HM13P10K-VB is very suitable for load switches and reverse protection circuits of high-voltage power supplies, and can provide reliable reverse current blocking capability to ensure the safety and stability of the power supply system.
2. **Battery management system (BMS)**: This MOSFET can be used for charge and discharge control and protection in battery management systems, especially in battery packs that need to handle higher voltages, providing efficient current management and overvoltage protection.
3. **DC-DC converter**: HM13P10K-VB is suitable for high-voltage side switches in DC-DC converters, and can effectively handle high-voltage signals during the conversion process and improve conversion efficiency.
4. **Inverter and Motor Drive**: In inverter and motor drive modules, this MOSFET is capable of handling high voltage and medium current, making it particularly suitable for high-voltage applications that require precise control, such as photovoltaic inverters and power tools.
These features make the HM13P10K-VB MOSFET excel in high-voltage applications, providing a reliable and efficient solution for a variety of power electronic devices.
The high-voltage P-channel characteristics and medium current handling capability of HM13P10K-VB MOSFET give it advantages in a variety of application scenarios. The following are some typical application fields and modules:
1. **Power switch circuit**: HM13P10K-VB is very suitable for load switches and reverse protection circuits of high-voltage power supplies, and can provide reliable reverse current blocking capability to ensure the safety and stability of the power supply system.
2. **Battery management system (BMS)**: This MOSFET can be used for charge and discharge control and protection in battery management systems, especially in battery packs that need to handle higher voltages, providing efficient current management and overvoltage protection.
3. **DC-DC converter**: HM13P10K-VB is suitable for high-voltage side switches in DC-DC converters, and can effectively handle high-voltage signals during the conversion process and improve conversion efficiency.
4. **Inverter and Motor Drive**: In inverter and motor drive modules, this MOSFET is capable of handling high voltage and medium current, making it particularly suitable for high-voltage applications that require precise control, such as photovoltaic inverters and power tools.
These features make the HM13P10K-VB MOSFET excel in high-voltage applications, providing a reliable and efficient solution for a variety of power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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