Featured Model

Your present location > Home page > Featured Model

HM120N04-VB Product details

Product introduction:

HM120N04-VB MOSFET Product Introduction

HM120N04-VB is a high-performance single-channel N-type MOSFET in TO220 package, designed for low voltage, high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 40V, the gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 2.5V. Its on-resistance (RDS(ON)) is 7mΩ (at VGS of 4.5V) and 6mΩ (at VGS of 10V), and the maximum drain current (ID) is up to 110A. HM120N04-VB uses Trench technology to provide extremely low on-resistance and high current handling capability, suitable for high current load switching and power management applications.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 40V 2.5V 110A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 40V 2.5V 110A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 40V 2.5V 110A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
HM120N04-VB MOSFET Detailed parameter description

- **Package type**: TO220
- **Configuration**: Single channel N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 110A
- **Technology**: Trench technology
- **Power dissipation (Pd)**: 150W (typical)
- **Junction temperature range**: -55°C to 150°C

Domain and module applications:

Applications and module examples

The high current capability and low on-resistance of the HM120N04-VB MOSFET make it very effective in the following application areas:

1. **Switching Power Supply (SMPS)**: In high current switching power supply designs, the HM120N04-VB can be used as the main switching device, suitable for power modules that need to handle high currents, providing efficient power conversion and management.

2. **Motor Drive**: In motor drive applications, this MOSFET can be used for high current motor control, supporting large current switching operations to ensure stable operation of the motor under high load conditions.

3. **DC-DC Converter**: In DC-DC converters, the HM120N04-VB can be used as a low voltage high current switch to help achieve efficient power conversion, especially suitable for converter designs that require high current support.

4. **Battery Management System**: In the battery management system, HM120N04-VB can be used for battery switch control and protection, handling high current demands, ensuring safe and efficient operation of the battery.

Due to its extremely low on-resistance and high current handling capability, HM120N04-VB is an ideal choice for high current applications, providing stable performance and efficient power transmission in various power management and control modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat