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HM120N04K-VB Product details
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1. HM120N04K-VB Product Introduction
HM120N04K-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high current and low resistance applications. This MOSFET has a drain-source voltage (VDS) of 40V, which is suitable for medium voltage application scenarios. Its gate-source voltage (VGS) range is ±20V and the threshold voltage (Vth) is 3V, enabling it to switch stably at lower gate voltages. The on-resistance (RDS(ON)) is 3mΩ at VGS=4.5V and 1.6mΩ at VGS=10V, indicating that the device has extremely low conduction losses when switching. The HM120N04K-VB supports a continuous drain current (ID) of up to 120A and uses Trench technology, which helps achieve extremely low on-resistance and high switching speed, suitable for applications requiring high efficiency and high current handling.
HM120N04K-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high current and low resistance applications. This MOSFET has a drain-source voltage (VDS) of 40V, which is suitable for medium voltage application scenarios. Its gate-source voltage (VGS) range is ±20V and the threshold voltage (Vth) is 3V, enabling it to switch stably at lower gate voltages. The on-resistance (RDS(ON)) is 3mΩ at VGS=4.5V and 1.6mΩ at VGS=10V, indicating that the device has extremely low conduction losses when switching. The HM120N04K-VB supports a continuous drain current (ID) of up to 120A and uses Trench technology, which helps achieve extremely low on-resistance and high switching speed, suitable for applications requiring high efficiency and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 1.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of HM120N04K-VB
1. **Package type**: TO252
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 40V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 1.6mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 120A
8. **Technology type**: Trench
9. **Breakdown voltage (BVDSS)**: 40V
10. **Maximum power dissipation (Ptot)**: 100W
11. **Operating temperature range**: -55°C to +150°C
12. **Input capacitance (Ciss)**: 2200pF
13. **Output capacitance (Coss)**: 300pF
14. **Reverse recovery time (trr)**: 100ns
1. **Package type**: TO252
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 40V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 1.6mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 120A
8. **Technology type**: Trench
9. **Breakdown voltage (BVDSS)**: 40V
10. **Maximum power dissipation (Ptot)**: 100W
11. **Operating temperature range**: -55°C to +150°C
12. **Input capacitance (Ciss)**: 2200pF
13. **Output capacitance (Coss)**: 300pF
14. **Reverse recovery time (trr)**: 100ns
Domain and module applications：
3. Application fields and modules of HM120N04K-VB
The high current handling capability and extremely low on-resistance of HM120N04K-VB MOSFET enable it to perform well in multiple high-efficiency and high-current applications. Here are some typical application fields and modules:
1. **High-efficiency power management**: In high-efficiency power management systems, HM120N04K-VB can provide extremely low on-resistance and high current support, suitable for DC-DC converters, power distribution and high-power switching power supplies.
2. **Motor drive**: This MOSFET is very suitable for motor drive systems such as industrial motors and power tools. It can handle high currents and maintain low losses, ensuring efficient operation and long life of the motor.
3. **Battery management system**: In the battery management system (BMS), HM120N04K-VB can be used for efficient current control and protection, helping to improve the performance and safety of the battery, suitable for electric vehicles and energy storage systems.
4. **Inverters and Converters**: Widely used in photovoltaic inverters and other power converters, HM120N04K-VB can efficiently handle high currents during power conversion, improving the overall efficiency and stability of the inverter.
These characteristics make HM120N04K-VB MOSFET excel in power electronic devices that require high current and high efficiency, providing a stable and efficient solution for a variety of applications.
The high current handling capability and extremely low on-resistance of HM120N04K-VB MOSFET enable it to perform well in multiple high-efficiency and high-current applications. Here are some typical application fields and modules:
1. **High-efficiency power management**: In high-efficiency power management systems, HM120N04K-VB can provide extremely low on-resistance and high current support, suitable for DC-DC converters, power distribution and high-power switching power supplies.
2. **Motor drive**: This MOSFET is very suitable for motor drive systems such as industrial motors and power tools. It can handle high currents and maintain low losses, ensuring efficient operation and long life of the motor.
3. **Battery management system**: In the battery management system (BMS), HM120N04K-VB can be used for efficient current control and protection, helping to improve the performance and safety of the battery, suitable for electric vehicles and energy storage systems.
4. **Inverters and Converters**: Widely used in photovoltaic inverters and other power converters, HM120N04K-VB can efficiently handle high currents during power conversion, improving the overall efficiency and stability of the inverter.
These characteristics make HM120N04K-VB MOSFET excel in power electronic devices that require high current and high efficiency, providing a stable and efficient solution for a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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