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HM10N80F-VB Product details
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HM10N80F-VB MOSFET Product Introduction
The HM10N80F-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in a TO220F package. With a maximum drain-source voltage (VDS) of up to 850V, this MOSFET is suitable for high-voltage switching and power management applications. It supports a gate-source voltage (VGS) of ±30V and a turn-on threshold voltage (Vth) of 3.3V. The HM10N80F-VB uses planar technology and has an on-resistance (RDS(ON)) of 1150mΩ@VGS=10V and a rated drain current of 10A. This MOSFET is designed to meet the needs of high-voltage power switches and protection circuits, and has good voltage resistance and thermal performance.
The HM10N80F-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in a TO220F package. With a maximum drain-source voltage (VDS) of up to 850V, this MOSFET is suitable for high-voltage switching and power management applications. It supports a gate-source voltage (VGS) of ±30V and a turn-on threshold voltage (Vth) of 3.3V. The HM10N80F-VB uses planar technology and has an on-resistance (RDS(ON)) of 1150mΩ@VGS=10V and a rated drain current of 10A. This MOSFET is designed to meet the needs of high-voltage power switches and protection circuits, and has good voltage resistance and thermal performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 3.3V | 10A | 1150mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
HM10N80F-VB MOSFET Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 850V
- **Gate-source voltage (VGS)**: ±30V
- **Turning threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 1150mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Planar structure
- **Switching characteristics**: Suitable for high voltage switching applications
- **Thermal performance**: TO220F package, with good heat dissipation capability
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 850V
- **Gate-source voltage (VGS)**: ±30V
- **Turning threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 1150mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: Planar structure
- **Switching characteristics**: Suitable for high voltage switching applications
- **Thermal performance**: TO220F package, with good heat dissipation capability
Domain and module applications：
HM10N80F-VB MOSFET Application Fields and Modules
The high withstand voltage and moderate on-resistance of HM10N80F-VB MOSFET make it suitable for multiple high-voltage and high-power applications, including:
1. **Switching Power Supply (SMPS)**: In high-voltage switching power supplies, HM10N80F-VB can be used as a switching element to handle voltages up to 850V, suitable for efficient power conversion and voltage regulation.
2. **Power Inverter**: In power inverters, this MOSFET can handle high-voltage DC input and convert it to AC output, suitable for solar inverters and other power conversion equipment.
3. **Uninterruptible Power Supply (UPS)**: Used in inverter modules in UPS systems, HM10N80F-VB can ensure stable operation of the system during power outages, supporting high-voltage power management and protection.
4. **High-voltage power management**: In high-voltage power management modules, HM10N80F-VB can be used for high-voltage power switches and protection circuits to ensure safe operation of the system under high voltage conditions.
5. **Industrial power**: In industrial power modules, HM10N80F-VB can handle higher voltage power control and protection needs, suitable for high-power applications.
The high voltage resistance and reliability of HM10N80F-VB MOSFET make it perform well in handling high-voltage power and switching applications, especially suitable for power systems and industrial equipment that require high voltage protection and high power handling.
The high withstand voltage and moderate on-resistance of HM10N80F-VB MOSFET make it suitable for multiple high-voltage and high-power applications, including:
1. **Switching Power Supply (SMPS)**: In high-voltage switching power supplies, HM10N80F-VB can be used as a switching element to handle voltages up to 850V, suitable for efficient power conversion and voltage regulation.
2. **Power Inverter**: In power inverters, this MOSFET can handle high-voltage DC input and convert it to AC output, suitable for solar inverters and other power conversion equipment.
3. **Uninterruptible Power Supply (UPS)**: Used in inverter modules in UPS systems, HM10N80F-VB can ensure stable operation of the system during power outages, supporting high-voltage power management and protection.
4. **High-voltage power management**: In high-voltage power management modules, HM10N80F-VB can be used for high-voltage power switches and protection circuits to ensure safe operation of the system under high voltage conditions.
5. **Industrial power**: In industrial power modules, HM10N80F-VB can handle higher voltage power control and protection needs, suitable for high-power applications.
The high voltage resistance and reliability of HM10N80F-VB MOSFET make it perform well in handling high-voltage power and switching applications, especially suitable for power systems and industrial equipment that require high voltage protection and high power handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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