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HM10N65F-VB Product details
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1. HM10N65F-VB Product Introduction
HM10N65F-VB is a high-voltage single N-channel MOSFET in a TO220F package, designed for applications that require high voltage and high current handling. The device has a drain-source voltage (VDS) of 650V, suitable for operation in high-voltage environments. Its gate-source voltage (VGS) is up to ±30V, and its threshold voltage (Vth) is 3.5V, ensuring that the device can switch stably at a lower gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 830mΩ (at VGS=10V), and it supports a maximum continuous drain current (ID) of 10A. HM10N65F-VB uses planar technology (Plannar), which provides good electrical performance and thermal stability, and is suitable for a variety of high-voltage application scenarios.
HM10N65F-VB is a high-voltage single N-channel MOSFET in a TO220F package, designed for applications that require high voltage and high current handling. The device has a drain-source voltage (VDS) of 650V, suitable for operation in high-voltage environments. Its gate-source voltage (VGS) is up to ±30V, and its threshold voltage (Vth) is 3.5V, ensuring that the device can switch stably at a lower gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 830mΩ (at VGS=10V), and it supports a maximum continuous drain current (ID) of 10A. HM10N65F-VB uses planar technology (Plannar), which provides good electrical performance and thermal stability, and is suitable for a variety of high-voltage application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description of HM10N65F-VB
1. **Package type**: TO220F
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 830mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 10A
8. **Technology type**: Planar technology (Plannar)
9. **Breakdown voltage (BVDSS)**: 650V
10. **Maximum power dissipation (Ptot)**: 40W
11. **Operating temperature range**: -55°C to +150°C
12. **Input capacitance (Ciss)**: 1100pF
13. **Output capacitance (Coss)**: 130pF
14. **Reverse recovery time (trr)**: 300ns
1. **Package type**: TO220F
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 830mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 10A
8. **Technology type**: Planar technology (Plannar)
9. **Breakdown voltage (BVDSS)**: 650V
10. **Maximum power dissipation (Ptot)**: 40W
11. **Operating temperature range**: -55°C to +150°C
12. **Input capacitance (Ciss)**: 1100pF
13. **Output capacitance (Coss)**: 130pF
14. **Reverse recovery time (trr)**: 300ns
Domain and module applications：
3. Application fields and modules of HM10N65F-VB
The high voltage tolerance and moderate on-resistance of HM10N65F-VB MOSFET make it excel in many high-power and high-voltage applications. Here are some typical application fields and modules:
1. **High-voltage switching power supply**: In high-voltage switching power supply, HM10N65F-VB can handle voltages up to 650V, suitable for power switch control and protection, helping to improve power efficiency and reduce losses.
2. **Motor drive**: This MOSFET is suitable for high-voltage motor drive systems such as industrial motors and power tools, and can efficiently handle the starting and running current of the motor.
3. **Inverter application**: Widely used in photovoltaic inverters and other power converters, HM10N65F-VB can effectively convert and control electrical energy, suitable for photovoltaic power generation systems and uninterruptible power supplies (UPS) and other fields.
4. **Battery Management System**: In the battery management system (BMS), HM10N65F-VB can provide stable current control and protection to ensure the safety and efficient operation of the battery.
These features give HM10N65F-VB MOSFET significant advantages in high-voltage and high-power applications, providing a reliable and efficient solution for a variety of power electronic devices.
The high voltage tolerance and moderate on-resistance of HM10N65F-VB MOSFET make it excel in many high-power and high-voltage applications. Here are some typical application fields and modules:
1. **High-voltage switching power supply**: In high-voltage switching power supply, HM10N65F-VB can handle voltages up to 650V, suitable for power switch control and protection, helping to improve power efficiency and reduce losses.
2. **Motor drive**: This MOSFET is suitable for high-voltage motor drive systems such as industrial motors and power tools, and can efficiently handle the starting and running current of the motor.
3. **Inverter application**: Widely used in photovoltaic inverters and other power converters, HM10N65F-VB can effectively convert and control electrical energy, suitable for photovoltaic power generation systems and uninterruptible power supplies (UPS) and other fields.
4. **Battery Management System**: In the battery management system (BMS), HM10N65F-VB can provide stable current control and protection to ensure the safety and efficient operation of the battery.
These features give HM10N65F-VB MOSFET significant advantages in high-voltage and high-power applications, providing a reliable and efficient solution for a variety of power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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