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HM10N10K-VB Product details
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HM10N10K-VB MOSFET Product Introduction
**HM10N10K-VB** is a high voltage N-channel MOSFET in TO252 package using Trench technology. This MOSFET is designed to handle higher voltages and currents, and is suitable for a variety of power management and switching applications. Its 100V drain-source withstand voltage enables it to handle higher voltages, making it suitable for use in applications with large voltage fluctuations. Matching its higher withstand voltage is its good conduction performance and low on-resistance, enabling it to perform well in a variety of high current applications.
**HM10N10K-VB** is a high voltage N-channel MOSFET in TO252 package using Trench technology. This MOSFET is designed to handle higher voltages and currents, and is suitable for a variety of power management and switching applications. Its 100V drain-source withstand voltage enables it to handle higher voltages, making it suitable for use in applications with large voltage fluctuations. Matching its higher withstand voltage is its good conduction performance and low on-resistance, enabling it to perform well in a variety of high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HM10N10K-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology type**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology type**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Converter**: HM10N10K-VB is very effective in switch mode power supplies (SMPS) and DC-DC converters. Its 100V withstand voltage and low on-resistance (114mΩ) enable it to operate stably under high voltage and high current conditions, thereby improving power conversion efficiency and stability.
2. **Motor Drive**: This MOSFET is suitable for motor control circuits that require high voltage and medium current drive, such as DC motor or stepper motor drivers. Its high current carrying capacity (15A) and high voltage resistance ensure reliable drive and control of the motor.
3. **Load Switch**: In load switching applications, such as power switches and protection circuits, HM10N10K-VB is able to reliably handle high voltage loads. Its high current handling capability and low on-resistance enable it to perform well when switching loads, helping to reduce power consumption and heat generation.
4. **Power Management System**: Suitable for various power management systems, including power management and battery management systems. The MOSFET can provide stable switching performance in high voltage and high current working environments, ensuring efficient operation and reliability of the system.
The high withstand voltage, low on-resistance and high current capability of the HM10N10K-VB MOSFET make it an ideal choice for various high voltage and high current applications, providing stable and efficient performance in multiple fields.
1. **Power Converter**: HM10N10K-VB is very effective in switch mode power supplies (SMPS) and DC-DC converters. Its 100V withstand voltage and low on-resistance (114mΩ) enable it to operate stably under high voltage and high current conditions, thereby improving power conversion efficiency and stability.
2. **Motor Drive**: This MOSFET is suitable for motor control circuits that require high voltage and medium current drive, such as DC motor or stepper motor drivers. Its high current carrying capacity (15A) and high voltage resistance ensure reliable drive and control of the motor.
3. **Load Switch**: In load switching applications, such as power switches and protection circuits, HM10N10K-VB is able to reliably handle high voltage loads. Its high current handling capability and low on-resistance enable it to perform well when switching loads, helping to reduce power consumption and heat generation.
4. **Power Management System**: Suitable for various power management systems, including power management and battery management systems. The MOSFET can provide stable switching performance in high voltage and high current working environments, ensuring efficient operation and reliability of the system.
The high withstand voltage, low on-resistance and high current capability of the HM10N10K-VB MOSFET make it an ideal choice for various high voltage and high current applications, providing stable and efficient performance in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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