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HM10N10KA-VB Product details
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Product Introduction
**HM10N10KA-VB** is a high-performance N-channel MOSFET in TO252 package, designed for medium voltage and current applications. This MOSFET has high voltage resistance and moderate on-resistance, suitable for circuits requiring stable switching performance. Its maximum drain-source voltage is 100V and gate-source voltage is ±20V, which can provide reliable switching control in a variety of electronic applications. Manufactured based on Trench technology, this MOSFET provides low on-resistance and good switching characteristics.
**HM10N10KA-VB** is a high-performance N-channel MOSFET in TO252 package, designed for medium voltage and current applications. This MOSFET has high voltage resistance and moderate on-resistance, suitable for circuits requiring stable switching performance. Its maximum drain-source voltage is 100V and gate-source voltage is ±20V, which can provide reliable switching control in a variety of electronic applications. Manufactured based on Trench technology, this MOSFET provides low on-resistance and good switching characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: HM10N10KA-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
- **Model**: HM10N10KA-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**
HM10N10KA-VB can be used in various power management systems, such as DC-DC converters and power distribution modules. Its high voltage tolerance and moderate on-resistance enable it to effectively handle power switching tasks and improve system efficiency.
2. **Motor drive**
Suitable for use in motor drive circuits, such as DC motors and stepper motor controllers. The high current capability and stable switching characteristics of this MOSFET ensure smooth and efficient motor operation, suitable for use in industrial and consumer electronic devices.
3. **Load switch**
In applications where load switching needs to be controlled, HM10N10KA-VB can be used as a switching element to handle high voltage and high current loads, such as switch control in home appliances, load switches in smart home devices, etc.
4. **Battery management system**
Used for switch control in battery management systems to help manage the battery charging and discharging process. Its low on-resistance helps reduce power consumption and improves the overall efficiency and life of the battery system.
5. **Automotive Electronics**
Suitable for switch control in automotive electronic systems, such as power windows, power seat adjustment, and on-board lighting control. The voltage and current handling capabilities of the HM10N10KA-VB enable it to provide stable switching operation in an automotive environment.
The high voltage withstand capability and excellent on-state performance of the HM10N10KA-VB enable it to excel in a variety of electronic applications, especially providing a reliable solution for switching tasks that need to handle medium voltages and currents.
1. **Power management**
HM10N10KA-VB can be used in various power management systems, such as DC-DC converters and power distribution modules. Its high voltage tolerance and moderate on-resistance enable it to effectively handle power switching tasks and improve system efficiency.
2. **Motor drive**
Suitable for use in motor drive circuits, such as DC motors and stepper motor controllers. The high current capability and stable switching characteristics of this MOSFET ensure smooth and efficient motor operation, suitable for use in industrial and consumer electronic devices.
3. **Load switch**
In applications where load switching needs to be controlled, HM10N10KA-VB can be used as a switching element to handle high voltage and high current loads, such as switch control in home appliances, load switches in smart home devices, etc.
4. **Battery management system**
Used for switch control in battery management systems to help manage the battery charging and discharging process. Its low on-resistance helps reduce power consumption and improves the overall efficiency and life of the battery system.
5. **Automotive Electronics**
Suitable for switch control in automotive electronic systems, such as power windows, power seat adjustment, and on-board lighting control. The voltage and current handling capabilities of the HM10N10KA-VB enable it to provide stable switching operation in an automotive environment.
The high voltage withstand capability and excellent on-state performance of the HM10N10KA-VB enable it to excel in a variety of electronic applications, especially providing a reliable solution for switching tasks that need to handle medium voltages and currents.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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