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HM100P03K-VB Product details
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HM100P03K-VB MOSFET Product Introduction
HM100P03K-VB is a high-performance single-channel P-type MOSFET in TO252 package, designed for low voltage, high current applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, the gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is -3V. It uses Trench technology, has extremely low on-resistance (RDS(ON) is 7mΩ @ VGS = 4.5V and 5mΩ @ VGS = 10V), and supports a drain current (ID) of up to -100A. The HM100P03K-VB is particularly suitable for high current load switching and power management applications, and can provide excellent switching performance and efficiency at low voltage.
HM100P03K-VB is a high-performance single-channel P-type MOSFET in TO252 package, designed for low voltage, high current applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, the gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is -3V. It uses Trench technology, has extremely low on-resistance (RDS(ON) is 7mΩ @ VGS = 4.5V and 5mΩ @ VGS = 10V), and supports a drain current (ID) of up to -100A. The HM100P03K-VB is particularly suitable for high current load switching and power management applications, and can provide excellent switching performance and efficiency at low voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -3V | -100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
HM100P03K-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -100A
- **Technology**: Trench technology
- **Power dissipation (Pd)**: 150W (typical)
- **Junction temperature range**: -55°C to 150°C
- **Package type**: TO252
- **Configuration**: Single channel P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -100A
- **Technology**: Trench technology
- **Power dissipation (Pd)**: 150W (typical)
- **Junction temperature range**: -55°C to 150°C
Domain and module applications：
Application fields and module examples
The low on-resistance and high current capability of the HM100P03K-VB MOSFET make it very effective in the following fields and modules:
1. **Power management**: In power management systems, the HM100P03K-VB can be used as a load switch to control the start and stop of high current circuits. The low on-resistance of this MOSFET can reduce switching losses and improve the overall efficiency of the system.
2. **Motor drive**: In motor drive applications, this MOSFET can be used for high current motor control, providing reliable switching capabilities to ensure smooth operation of the motor under various load conditions.
3. **DC-DC converter**: In DC-DC converters, the HM100P03K-VB can be used as a high current switch to help achieve efficient power conversion, especially in situations where high efficiency and low power loss are required.
4. **Battery Management System**: In the battery management system, HM100P03K-VB can be used for overcurrent protection and switch control of the battery, ensuring the battery is safe and reliable during charging and discharging.
Due to its low on-resistance and high current handling capability, HM100P03K-VB MOSFET is an ideal choice for high current switching and power management applications, providing stable performance and efficient power control.
The low on-resistance and high current capability of the HM100P03K-VB MOSFET make it very effective in the following fields and modules:
1. **Power management**: In power management systems, the HM100P03K-VB can be used as a load switch to control the start and stop of high current circuits. The low on-resistance of this MOSFET can reduce switching losses and improve the overall efficiency of the system.
2. **Motor drive**: In motor drive applications, this MOSFET can be used for high current motor control, providing reliable switching capabilities to ensure smooth operation of the motor under various load conditions.
3. **DC-DC converter**: In DC-DC converters, the HM100P03K-VB can be used as a high current switch to help achieve efficient power conversion, especially in situations where high efficiency and low power loss are required.
4. **Battery Management System**: In the battery management system, HM100P03K-VB can be used for overcurrent protection and switch control of the battery, ensuring the battery is safe and reliable during charging and discharging.
Due to its low on-resistance and high current handling capability, HM100P03K-VB MOSFET is an ideal choice for high current switching and power management applications, providing stable performance and efficient power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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