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HM100N20T-VB Product details
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1. HM100N20T-VB Product Introduction
HM100N20T-VB is a high-performance single N-channel MOSFET in TO247 package, designed for applications requiring high current and high efficiency. The device has a drain-source voltage (VDS) of 200V, suitable for high voltage operation. The maximum value of the gate-source voltage (VGS) is ±20V, while the threshold voltage (Vth) is 4V, enabling stable switching at low gate voltages. Its on-resistance (RDS(ON)) is 21mΩ (at VGS=10V), and it can support a continuous drain current (ID) of up to 96A. HM100N20T-VB uses Trench technology, which helps achieve low on-resistance and high switching speed, providing excellent electrical performance.
HM100N20T-VB is a high-performance single N-channel MOSFET in TO247 package, designed for applications requiring high current and high efficiency. The device has a drain-source voltage (VDS) of 200V, suitable for high voltage operation. The maximum value of the gate-source voltage (VGS) is ±20V, while the threshold voltage (Vth) is 4V, enabling stable switching at low gate voltages. Its on-resistance (RDS(ON)) is 21mΩ (at VGS=10V), and it can support a continuous drain current (ID) of up to 96A. HM100N20T-VB uses Trench technology, which helps achieve low on-resistance and high switching speed, providing excellent electrical performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | 21mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 200V | 4V | 96A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. Detailed parameter description of HM100N20T-VB
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 200V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 4V
6. **On-resistance (RDS(ON))**: 21mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 96A
8. **Technology type**: Trench
9. **Breakdown voltage (BVDSS)**: 200V
10. **Maximum power dissipation (Ptot)**: 150W
11. **Operating temperature range**: -55°C to +150°C
12. **Input capacitance (Ciss)**: 4800pF
13. **Output capacitance (Coss)**: 580pF
14. **Reverse recovery time (trr)**: 150ns
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 200V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 4V
6. **On-resistance (RDS(ON))**: 21mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 96A
8. **Technology type**: Trench
9. **Breakdown voltage (BVDSS)**: 200V
10. **Maximum power dissipation (Ptot)**: 150W
11. **Operating temperature range**: -55°C to +150°C
12. **Input capacitance (Ciss)**: 4800pF
13. **Output capacitance (Coss)**: 580pF
14. **Reverse recovery time (trr)**: 150ns
Domain and module applications：
3. Application fields and modules of HM100N20T-VB
The high current carrying capacity and low on-resistance of HM100N20T-VB MOSFET make it excel in multiple high-power and high-efficiency applications. Here are some typical application fields and modules:
1. **Power converter**: In high-efficiency switching power supplies such as DC-DC converters and AC-DC adapters, HM100N20T-VB is able to provide low conduction losses and high current handling capabilities, optimize power conversion efficiency and reduce heat loss.
2. **Motor drive**: Suitable for high-current motor drive systems, such as electric vehicle motor drives and industrial motor drives. HM100N20T-VB can efficiently handle the high current requirements of motor starting and operation.
3. **Battery Management System**: In the Battery Management System (BMS), the high current capability and low on-resistance of the HM100N20T-VB make it very suitable for battery protection and current control, ensuring safe and efficient operation of the battery.
4. **Inverter Application**: Widely used in photovoltaic inverters and other high-power inverters, the HM100N20T-VB can effectively handle the high current and high voltage during the inverter process, improving the overall efficiency and reliability of the inverter.
These characteristics make the HM100N20T-VB MOSFET perform well in applications that require high current handling and low energy loss, providing a stable and efficient solution for a variety of power electronic devices.
The high current carrying capacity and low on-resistance of HM100N20T-VB MOSFET make it excel in multiple high-power and high-efficiency applications. Here are some typical application fields and modules:
1. **Power converter**: In high-efficiency switching power supplies such as DC-DC converters and AC-DC adapters, HM100N20T-VB is able to provide low conduction losses and high current handling capabilities, optimize power conversion efficiency and reduce heat loss.
2. **Motor drive**: Suitable for high-current motor drive systems, such as electric vehicle motor drives and industrial motor drives. HM100N20T-VB can efficiently handle the high current requirements of motor starting and operation.
3. **Battery Management System**: In the Battery Management System (BMS), the high current capability and low on-resistance of the HM100N20T-VB make it very suitable for battery protection and current control, ensuring safe and efficient operation of the battery.
4. **Inverter Application**: Widely used in photovoltaic inverters and other high-power inverters, the HM100N20T-VB can effectively handle the high current and high voltage during the inverter process, improving the overall efficiency and reliability of the inverter.
These characteristics make the HM100N20T-VB MOSFET perform well in applications that require high current handling and low energy loss, providing a stable and efficient solution for a variety of power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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