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HM100N02K-VB Product details
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HM100N02K-VB MOSFET Product Introduction
**HM100N02K-VB** is a high-performance N-channel MOSFET in TO252 package. It uses Trench technology to provide extremely low on-resistance and high current handling capability. Its 20V drain-source withstand voltage is suitable for applications requiring high current and low conduction losses. This MOSFET is particularly suitable for low-voltage and high-current switching and driving applications, and can provide excellent performance in a smaller package.
**HM100N02K-VB** is a high-performance N-channel MOSFET in TO252 package. It uses Trench technology to provide extremely low on-resistance and high current handling capability. Its 20V drain-source withstand voltage is suitable for applications requiring high current and low conduction losses. This MOSFET is particularly suitable for low-voltage and high-current switching and driving applications, and can provide excellent performance in a smaller package.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HM100N02K-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 20V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS=2.5V
- 2.5mΩ @ VGS=4.5V
- **Drain current (ID)**: 120A
- **Technology type**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 20V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS=2.5V
- 2.5mΩ @ VGS=4.5V
- **Drain current (ID)**: 120A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples
1. **High-efficiency power management**: HM100N02K-VB is suitable for high-efficiency power management systems, such as DC-DC converters and power distribution modules. Its extremely low on-resistance and high current capability enable it to significantly reduce power consumption and improve the energy efficiency of the system when handling high current loads.
2. **Motor drive**: In motor drive applications, this MOSFET can be used in low-voltage motor control circuits, especially in scenarios where high current drive is required. Its high current handling capability (120A) and low on-resistance (2.5mΩ) ensure stable operation and efficient drive of the motor.
3. **Switching power supply**: Suitable for various switching power supplies (such as switch-mode power supplies and inverters), HM100N02K-VB is able to provide stable performance at high switching frequencies. Its low on-resistance and high current capability make it an ideal choice in switching power supply design.
4. **Load Switch**: This MOSFET is also suitable for load switching applications such as power switches and load protection circuits. Its low on-resistance and high current handling capability enable it to handle large currents during switching while reducing heat generation and power losses.
With its excellent electrical performance and high current handling capability, the HM100N02K-VB MOSFET provides a reliable solution for various low-voltage and high-current applications.
1. **High-efficiency power management**: HM100N02K-VB is suitable for high-efficiency power management systems, such as DC-DC converters and power distribution modules. Its extremely low on-resistance and high current capability enable it to significantly reduce power consumption and improve the energy efficiency of the system when handling high current loads.
2. **Motor drive**: In motor drive applications, this MOSFET can be used in low-voltage motor control circuits, especially in scenarios where high current drive is required. Its high current handling capability (120A) and low on-resistance (2.5mΩ) ensure stable operation and efficient drive of the motor.
3. **Switching power supply**: Suitable for various switching power supplies (such as switch-mode power supplies and inverters), HM100N02K-VB is able to provide stable performance at high switching frequencies. Its low on-resistance and high current capability make it an ideal choice in switching power supply design.
4. **Load Switch**: This MOSFET is also suitable for load switching applications such as power switches and load protection circuits. Its low on-resistance and high current handling capability enable it to handle large currents during switching while reducing heat generation and power losses.
With its excellent electrical performance and high current handling capability, the HM100N02K-VB MOSFET provides a reliable solution for various low-voltage and high-current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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