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HIRF840-VB TO220F Product details

Product introduction:

HIRF840-VB MOSFET Product Introduction

HIRF840-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in a TO220F package. It is designed for high voltage applications with a maximum drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. This MOSFET uses planar technology and has a low on-resistance (RDS(ON) of 680mΩ@VGS=10V), making it suitable for handling high currents (drain current ID up to 12A). HIRF840-VB provides good switching characteristics and thermal management performance, making it an ideal choice for high voltage power switches and other high power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 12A 680mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
HIRF840-VB MOSFET detailed parameter description

- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ @ VGS=10V
- **Drain current (ID)**: 12A
- **Technology**: Planar structure
- **Switching characteristics**: Suitable for high voltage switching applications
- **Thermal performance**: TO220F package, with good heat dissipation capability

Domain and module applications:

HIRF840-VB MOSFET Application Fields and Modules

HIRF840-VB MOSFET is suitable for multiple high voltage and high power applications, including:

1. **Switching Power Supply (SMPS)**: In high voltage switching power supplies, HIRF840-VB can be used as the main switching element to handle voltages up to 650V while maintaining good switching efficiency, suitable for applications such as DC-DC Converters.

2. **Uninterruptible Power Supply (UPS)**: In UPS systems, this MOSFET is suitable for use as a switching element in the inverter, capable of stable operation in a high voltage environment, ensuring that the system can operate normally when the power is interrupted.

3. **Motor Drive**: Used in high voltage motor drive systems, HIRF840-VB can handle high voltage pulses during motor startup and operation, ensuring smooth operation of the motor.

4. **Power Inverter**: In solar inverters and other power inverters, this MOSFET can be used as a key switching element for high-voltage DC to AC conversion, improving the overall efficiency and reliability of the system.

5. **High-voltage Power Management**: In power management systems that need to handle high voltage and high current, the HIRF840-VB is suitable for high-voltage power control and protection modules.

With its high withstand voltage and moderate on-resistance, the HIRF840-VB is suitable for a variety of applications that require high voltage handling, providing a reliable power switch solution for the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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