HIRF840-VB TO220F Product details
Product introduction:
HIRF840-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in a TO220F package. It is designed for high voltage applications with a maximum drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. This MOSFET uses planar technology and has a low on-resistance (RDS(ON) of 680mΩ@VGS=10V), making it suitable for handling high currents (drain current ID up to 12A). HIRF840-VB provides good switching characteristics and thermal management performance, making it an ideal choice for high voltage power switches and other high power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ @ VGS=10V
- **Drain current (ID)**: 12A
- **Technology**: Planar structure
- **Switching characteristics**: Suitable for high voltage switching applications
- **Thermal performance**: TO220F package, with good heat dissipation capability
Domain and module applications:
HIRF840-VB MOSFET is suitable for multiple high voltage and high power applications, including:
1. **Switching Power Supply (SMPS)**: In high voltage switching power supplies, HIRF840-VB can be used as the main switching element to handle voltages up to 650V while maintaining good switching efficiency, suitable for applications such as DC-DC Converters.
2. **Uninterruptible Power Supply (UPS)**: In UPS systems, this MOSFET is suitable for use as a switching element in the inverter, capable of stable operation in a high voltage environment, ensuring that the system can operate normally when the power is interrupted.
3. **Motor Drive**: Used in high voltage motor drive systems, HIRF840-VB can handle high voltage pulses during motor startup and operation, ensuring smooth operation of the motor.
4. **Power Inverter**: In solar inverters and other power inverters, this MOSFET can be used as a key switching element for high-voltage DC to AC conversion, improving the overall efficiency and reliability of the system.
5. **High-voltage Power Management**: In power management systems that need to handle high voltage and high current, the HIRF840-VB is suitable for high-voltage power control and protection modules.
With its high withstand voltage and moderate on-resistance, the HIRF840-VB is suitable for a variety of applications that require high voltage handling, providing a reliable power switch solution for the system.
Technical support:
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