HFU5N40-VB Product details
Product introduction:
**HFU5N40-VB** is a high voltage N-channel MOSFET in TO251 package. This model is designed for applications that require high voltage and high current capabilities, especially in high power and high voltage environments. Its SJ_Multi-EPI technology provides excellent electrical performance and reliability, enabling it to perform well in complex power systems. With a drain-source voltage of up to 650V, this MOSFET is suitable for a variety of application scenarios that require high voltage and stable switching performance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
Domain and module applications:
1. **High-voltage Power Conversion**: HFU5N40-VB is suitable for high-voltage power converters and power management systems. Its 650V drain-source withstand voltage and high current handling capability make it an ideal choice when designing high-voltage power modules, effectively handling high voltage input and load requirements.
2. **Industrial Motor Control**: In industrial motor drive applications, this MOSFET can be used in high-voltage motor control circuits. Its high current carrying capacity (5A) and low on-resistance (950mΩ) enable it to stably control the motor under high-voltage environments and provide reliable driving performance.
3. **Power Inverter**: HFU5N40-VB is suitable for power inverter modules, especially inverter systems that require high withstand voltage. This MOSFET is able to handle the high voltage and high current requirements in the inverter, ensuring efficient and stable operation of the system.
4. **High-voltage Lighting System**: This MOSFET is also suitable for high-voltage lighting systems, such as xenon lamps or LED lighting systems. It can effectively handle high-voltage switching and driving tasks, improving the efficiency and performance of lighting systems.
The HFU5N40-VB MOSFET provides high voltage withstand and high current handling capabilities in these applications, ensuring reliability and stability in a variety of power management and control tasks.
Technical support:
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