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HFU2N65-VB Product details
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HFU2N65-VB MOSFET Product Introduction
The HFU2N65-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in a TO251 package. Its main features include a maximum drain-source voltage (VDS) of up to 650V, suitable for high voltage switching and power conversion applications. The HFU2N65-VB uses planar technology and has a high voltage withstand capability, but its on-resistance is high, reaching 4300mΩ@VGS=10V, and the drain current is rated at 2A. This MOSFET is particularly suitable for applications that require high voltage withstand but less stringent on-resistance requirements.
The HFU2N65-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in a TO251 package. Its main features include a maximum drain-source voltage (VDS) of up to 650V, suitable for high voltage switching and power conversion applications. The HFU2N65-VB uses planar technology and has a high voltage withstand capability, but its on-resistance is high, reaching 4300mΩ@VGS=10V, and the drain current is rated at 2A. This MOSFET is particularly suitable for applications that require high voltage withstand but less stringent on-resistance requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
HFU2N65-VB MOSFET detailed parameter description
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Planar structure
- **Switching characteristics**: Suitable for medium frequency switching applications
- **Thermal performance**: Using TO251 package, suitable for use under limited heat dissipation conditions
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Planar structure
- **Switching characteristics**: Suitable for medium frequency switching applications
- **Thermal performance**: Using TO251 package, suitable for use under limited heat dissipation conditions
Domain and module applications：
HFU2N65-VB MOSFET Applicable Fields and Modules
HFU2N65-VB MOSFET is mainly suitable for the following fields and modules:
1. **High-voltage power switch**: Due to its 650V withstand voltage capability, HFU2N65-VB can be used in high-voltage DC power switches and performs well in applications that do not require extremely low on-resistance.
2. **Power inverter**: In power inverters, this MOSFET can handle high-voltage DC input and convert it into AC output, suitable for inverter modules that require high withstand voltage.
3. **Power tools and home appliances**: In some medium-power power tools and home appliances, HFU2N65-VB can be used as a switching element to control high-voltage and high-power currents to meet equipment operation requirements.
4. **Industrial Power**: In industrial power modules, the high withstand voltage characteristics of this MOSFET make it suitable for handling higher voltage power control, especially for devices with high power requirements.
Although the on-resistance of HFU2N65-VB is high, its superior withstand voltage performance makes it play an important role in applications that require high voltage protection.
HFU2N65-VB MOSFET is mainly suitable for the following fields and modules:
1. **High-voltage power switch**: Due to its 650V withstand voltage capability, HFU2N65-VB can be used in high-voltage DC power switches and performs well in applications that do not require extremely low on-resistance.
2. **Power inverter**: In power inverters, this MOSFET can handle high-voltage DC input and convert it into AC output, suitable for inverter modules that require high withstand voltage.
3. **Power tools and home appliances**: In some medium-power power tools and home appliances, HFU2N65-VB can be used as a switching element to control high-voltage and high-power currents to meet equipment operation requirements.
4. **Industrial Power**: In industrial power modules, the high withstand voltage characteristics of this MOSFET make it suitable for handling higher voltage power control, especially for devices with high power requirements.
Although the on-resistance of HFU2N65-VB is high, its superior withstand voltage performance makes it play an important role in applications that require high voltage protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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