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HFU1N80-VB Product details
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1. HFU1N80-VB Product Introduction
HFU1N80-VB is a high voltage single N-channel MOSFET in TO251 package, specially designed for electronic applications that need to handle high voltage. The device has a drain-source voltage (VDS) of 800V and can operate stably in a high voltage environment. Its gate-source voltage (VGS) is ±30V and the threshold voltage (Vth) is 3.5V, ensuring that it can switch reliably under gate voltage control. The on-resistance (RDS(ON)) of this MOSFET is 2600mΩ (at VGS=10V), which is suitable for applications with high currents, and its maximum drain current (ID) is 2A. It uses SJ_Multi-EPI technology, which helps to improve the voltage resistance and thermal stability of the device.
HFU1N80-VB is a high voltage single N-channel MOSFET in TO251 package, specially designed for electronic applications that need to handle high voltage. The device has a drain-source voltage (VDS) of 800V and can operate stably in a high voltage environment. Its gate-source voltage (VGS) is ±30V and the threshold voltage (Vth) is 3.5V, ensuring that it can switch reliably under gate voltage control. The on-resistance (RDS(ON)) of this MOSFET is 2600mΩ (at VGS=10V), which is suitable for applications with high currents, and its maximum drain current (ID) is 2A. It uses SJ_Multi-EPI technology, which helps to improve the voltage resistance and thermal stability of the device.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. Detailed parameter description of HFU1N80-VB
1. **Package type**: TO251
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 800V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 2600mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 2A
8. **Technology type**: SJ_Multi-EPI
9. **Breakdown voltage (BVDSS)**: 800V
10. **Maximum power dissipation (Ptot)**: 30W
11. **Operating temperature range**: -55°C to +150°C
12. **Input capacitance (Ciss)**: 600pF
13. **Output capacitance (Coss)**: 60pF
14. **Reverse recovery time (trr)**: 300ns
1. **Package type**: TO251
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 800V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 2600mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 2A
8. **Technology type**: SJ_Multi-EPI
9. **Breakdown voltage (BVDSS)**: 800V
10. **Maximum power dissipation (Ptot)**: 30W
11. **Operating temperature range**: -55°C to +150°C
12. **Input capacitance (Ciss)**: 600pF
13. **Output capacitance (Coss)**: 60pF
14. **Reverse recovery time (trr)**: 300ns
Domain and module applications：
3. Application fields and modules of HFU1N80-VB
HFU1N80-VB MOSFET has excellent high voltage tolerance and is suitable for various high voltage application scenarios. The following are some typical application fields and modules:
1. **High voltage switching power supply**: In high voltage switching power supply, HFU1N80-VB can handle voltages up to 800V and provide reliable switching control for the high voltage end of the power supply to ensure the stability and safety of the power supply.
2. **Power converter**: In power converters such as inverters and DC-AC converters, HFU1N80-VB can effectively handle high voltage loads and is suitable for fields such as solar power generation systems and uninterruptible power supplies (UPS).
3. **Motor drive**: In motor drive circuits, especially in the control of high voltage motors, HFU1N80-VB can withstand higher voltages and currents and is suitable for industrial automation equipment.
4. **Lighting systems**: In high-voltage lighting systems such as high-intensity discharge lamps, this MOSFET can stably control large currents to ensure stable operation of the lamps.
The high voltage resistance and robust performance of the HFU1N80-VB make it a reliable choice in these fields and can meet the needs of high-voltage applications.
HFU1N80-VB MOSFET has excellent high voltage tolerance and is suitable for various high voltage application scenarios. The following are some typical application fields and modules:
1. **High voltage switching power supply**: In high voltage switching power supply, HFU1N80-VB can handle voltages up to 800V and provide reliable switching control for the high voltage end of the power supply to ensure the stability and safety of the power supply.
2. **Power converter**: In power converters such as inverters and DC-AC converters, HFU1N80-VB can effectively handle high voltage loads and is suitable for fields such as solar power generation systems and uninterruptible power supplies (UPS).
3. **Motor drive**: In motor drive circuits, especially in the control of high voltage motors, HFU1N80-VB can withstand higher voltages and currents and is suitable for industrial automation equipment.
4. **Lighting systems**: In high-voltage lighting systems such as high-intensity discharge lamps, this MOSFET can stably control large currents to ensure stable operation of the lamps.
The high voltage resistance and robust performance of the HFU1N80-VB make it a reliable choice in these fields and can meet the needs of high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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