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HFU1N70-VB Product details
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1. HFU1N70-VB Product Introduction
HFU1N70-VB is a single-channel N-type MOSFET in TO251 package with a drain-source breakdown voltage (VDS) of 700V and a gate-source voltage (VGS) of ±30V. It is manufactured using SJ_Multi-EPI technology, has a threshold voltage (Vth) of 3.5V, and an on-resistance of 2400mΩ when VGS is 10V. Its maximum drain current (ID) is 2A, suitable for high-voltage and low-current applications.
HFU1N70-VB is a single-channel N-type MOSFET in TO251 package with a drain-source breakdown voltage (VDS) of 700V and a gate-source voltage (VGS) of ±30V. It is manufactured using SJ_Multi-EPI technology, has a threshold voltage (Vth) of 3.5V, and an on-resistance of 2400mΩ when VGS is 10V. Its maximum drain current (ID) is 2A, suitable for high-voltage and low-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description of HFU1N70-VB
- **Package type**: TO251
- **Channel configuration**: Single N type
- **Drain-source breakdown voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO251
- **Channel configuration**: Single N type
- **Drain-source breakdown voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
III. Application fields and module examples of HFU1N70-VB
**1. High-voltage switching power supply **
HFU1N70-VB can be used as the main switch device in high-voltage switching power supply. Its 700V withstand voltage characteristic makes it suitable for handling high input voltage situations, such as AC to DC conversion. Although its on-resistance is high, it can still provide sufficient reliability and efficiency in low current applications.
**2. Electronic transformer **
In electronic transformers, HFU1N70-VB can be used as the main switch to handle high voltage input. Its high withstand voltage capability of 700V makes it perform well in the voltage conversion process.
**3. Lighting control system **
This MOSFET can be used as a switching element in high-voltage lighting control systems. It is suitable for lighting control modules that need to handle high voltage input to ensure stable current transmission.
**4. Protection circuits for electrical equipment**
HFU1N70-VB is also suitable for protection circuits for electrical equipment, for example, as an overvoltage protection switch in high-voltage equipment to protect circuits from unexpected voltage peaks.
Although the on-resistance of HFU1N70-VB is relatively high, its high withstand voltage characteristics make it excellent in high-voltage and low-current applications, and it is suitable for use in areas that require high voltage tolerance and stability.
**1. High-voltage switching power supply **
HFU1N70-VB can be used as the main switch device in high-voltage switching power supply. Its 700V withstand voltage characteristic makes it suitable for handling high input voltage situations, such as AC to DC conversion. Although its on-resistance is high, it can still provide sufficient reliability and efficiency in low current applications.
**2. Electronic transformer **
In electronic transformers, HFU1N70-VB can be used as the main switch to handle high voltage input. Its high withstand voltage capability of 700V makes it perform well in the voltage conversion process.
**3. Lighting control system **
This MOSFET can be used as a switching element in high-voltage lighting control systems. It is suitable for lighting control modules that need to handle high voltage input to ensure stable current transmission.
**4. Protection circuits for electrical equipment**
HFU1N70-VB is also suitable for protection circuits for electrical equipment, for example, as an overvoltage protection switch in high-voltage equipment to protect circuits from unexpected voltage peaks.
Although the on-resistance of HFU1N70-VB is relatively high, its high withstand voltage characteristics make it excellent in high-voltage and low-current applications, and it is suitable for use in areas that require high voltage tolerance and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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