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HFU1N65S-VB Product details
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HFU1N65S-VB MOSFET Product Introduction
**HFU1N65S-VB** is a high voltage single N-channel MOSFET in TO251 package. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, the device is suitable for various high voltage applications. Its on-resistance (RDS(ON)) is 4300mΩ@VGS=10V and the maximum drain current (ID) is 2A. This MOSFET adopts planar technology (Plannar), has high breakdown voltage and reliability, and is suitable for various occasions requiring high voltage tolerance.
**HFU1N65S-VB** is a high voltage single N-channel MOSFET in TO251 package. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, the device is suitable for various high voltage applications. Its on-resistance (RDS(ON)) is 4300mΩ@VGS=10V and the maximum drain current (ID) is 2A. This MOSFET adopts planar technology (Plannar), has high breakdown voltage and reliability, and is suitable for various occasions requiring high voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
HFU1N65S-VB Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar
Domain and module applications：
Applications and module examples
HFU1N65S-VB MOSFET is suitable for applications that require high voltage tolerance, such as power management modules (such as AC-DC power converters), LED drive circuits, industrial control systems, and motor drives. This MOSFET can provide efficient power conversion and reliable voltage control in these applications, especially in situations where high voltage tolerance and low switching frequency requirements are required, such as power switching devices and power protection circuits, HFU1N65S-VB can perform well.
HFU1N65S-VB MOSFET is suitable for applications that require high voltage tolerance, such as power management modules (such as AC-DC power converters), LED drive circuits, industrial control systems, and motor drives. This MOSFET can provide efficient power conversion and reliable voltage control in these applications, especially in situations where high voltage tolerance and low switching frequency requirements are required, such as power switching devices and power protection circuits, HFU1N65S-VB can perform well.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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