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HFU1N60-VB Product details
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HFU1N60-VB MOSFET Product Introduction
**HFU1N60-VB** is a high voltage, low on-resistance single-channel N-channel MOSFET in TO251 package. It is designed to provide a reliable switching solution for applications that require high voltage tolerance and reliable performance. The device has a drain-source withstand voltage (VDS) of 650V and a gate voltage range of ±30V, which can operate effectively in a variety of industrial and power systems.
**HFU1N60-VB** is a high voltage, low on-resistance single-channel N-channel MOSFET in TO251 package. It is designed to provide a reliable switching solution for applications that require high voltage tolerance and reliable performance. The device has a drain-source withstand voltage (VDS) of 650V and a gate voltage range of ±30V, which can operate effectively in a variety of industrial and power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
HFU1N60-VB MOSFET Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology type**: Plannar
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology type**: Plannar
Domain and module applications：
Applications and module examples
1. **Industrial power**: HFU1N60-VB is suitable for industrial power modules, providing reliable power management and switch control under high voltage conditions. Its 650V withstand voltage enables it to handle higher voltage inputs, ensuring the stability and safety of the power supply.
2. **Lighting equipment**: In high-voltage lighting equipment such as LED lighting and HID lamps, this MOSFET can play a role in high-efficiency conversion circuits, providing stable current control and efficient energy management.
3. **Motor drive**: Due to its high withstand voltage and low on-resistance, HFU1N60-VB is suitable for use in motor drive circuits, especially systems that require high-voltage control, such as the control circuit of a brushless DC motor (BLDC).
4. **Power inverter**: Suitable for small and medium-power inverter modules, the device can be used in high-voltage switching converters to ensure efficient and stable operation of the inverter.
The HFU1N60-VB MOSFET excels in these areas and modules, providing engineers with reliable high-voltage switching and power management solutions.
1. **Industrial power**: HFU1N60-VB is suitable for industrial power modules, providing reliable power management and switch control under high voltage conditions. Its 650V withstand voltage enables it to handle higher voltage inputs, ensuring the stability and safety of the power supply.
2. **Lighting equipment**: In high-voltage lighting equipment such as LED lighting and HID lamps, this MOSFET can play a role in high-efficiency conversion circuits, providing stable current control and efficient energy management.
3. **Motor drive**: Due to its high withstand voltage and low on-resistance, HFU1N60-VB is suitable for use in motor drive circuits, especially systems that require high-voltage control, such as the control circuit of a brushless DC motor (BLDC).
4. **Power inverter**: Suitable for small and medium-power inverter modules, the device can be used in high-voltage switching converters to ensure efficient and stable operation of the inverter.
The HFU1N60-VB MOSFET excels in these areas and modules, providing engineers with reliable high-voltage switching and power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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