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HFU1N60S-VB Product details
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Product Introduction
**HFU1N60S-VB** is a high voltage N-channel MOSFET with excellent voltage resistance and moderate on-resistance. It uses a TO251 package and can provide stable performance in a variety of applications. This MOSFET is designed for high voltage switching applications and can withstand a maximum drain voltage of 650V. It is manufactured using planar technology and is suitable for applications requiring high voltage protection and current control.
**HFU1N60S-VB** is a high voltage N-channel MOSFET with excellent voltage resistance and moderate on-resistance. It uses a TO251 package and can provide stable performance in a variety of applications. This MOSFET is designed for high voltage switching applications and can withstand a maximum drain voltage of 650V. It is manufactured using planar technology and is suitable for applications requiring high voltage protection and current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: HFU1N60S-VB
- **Package**: TO251
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Planar technology
- **Model**: HFU1N60S-VB
- **Package**: TO251
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Planar technology
Domain and module applications：
Applicable fields and modules
1. **High voltage switching circuits**
The high VDS of HFU1N60S-VB can handle switching applications in high voltage environments. It is suitable for use in power management modules that require high voltage switching, such as power converters, inverters, and high voltage power switches.
2. **Household appliances**
Due to its high voltage withstand capability and high RDS(ON) value, this MOSFET can be used in high voltage switch control circuits in household appliances, such as control boards of air conditioners, electric water heaters, and washing machines.
3. **Motor drivers**
In motor drive systems, HFU1N60S-VB can be used as a switching element in motor control circuits, suitable for high voltage DC motor and stepper motor drive applications.
4. **Power converter**
Switching modules used in power converters, capable of stable operation at high voltages, suitable for various industrial and commercial power conversion applications, including UPS systems and power adapters.
5. **LED drive circuit**
Suitable for switch control in high-voltage LED drive circuits, it can effectively control current and voltage in high-voltage LED drive modules to achieve stable light source output.
The high voltage tolerance and moderate on-resistance of HFU1N60S-VB make it perform well in various high-voltage and high-current applications, providing a reliable switch solution for electronic devices in different fields.
1. **High voltage switching circuits**
The high VDS of HFU1N60S-VB can handle switching applications in high voltage environments. It is suitable for use in power management modules that require high voltage switching, such as power converters, inverters, and high voltage power switches.
2. **Household appliances**
Due to its high voltage withstand capability and high RDS(ON) value, this MOSFET can be used in high voltage switch control circuits in household appliances, such as control boards of air conditioners, electric water heaters, and washing machines.
3. **Motor drivers**
In motor drive systems, HFU1N60S-VB can be used as a switching element in motor control circuits, suitable for high voltage DC motor and stepper motor drive applications.
4. **Power converter**
Switching modules used in power converters, capable of stable operation at high voltages, suitable for various industrial and commercial power conversion applications, including UPS systems and power adapters.
5. **LED drive circuit**
Suitable for switch control in high-voltage LED drive circuits, it can effectively control current and voltage in high-voltage LED drive modules to achieve stable light source output.
The high voltage tolerance and moderate on-resistance of HFU1N60S-VB make it perform well in various high-voltage and high-current applications, providing a reliable switch solution for electronic devices in different fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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