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HFS9N50-VB Product details
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HFS9N50-VB MOSFET Product Introduction
HFS9N50-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO220F package. It has high voltage resistance, maximum drain-source voltage (VDS) up to 650V, gate-source voltage (VGS) of ±30V, suitable for high-voltage power conversion and switching circuit applications. Its RDS(ON) value is 680mΩ@VGS=10V, and the on-resistance is low, which can reduce switching losses and improve efficiency. This device adopts planar structure technology, has good switching characteristics and thermal performance, and has a rated current of 12A, which is suitable for use in power management and circuit protection in high-voltage environments.
HFS9N50-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO220F package. It has high voltage resistance, maximum drain-source voltage (VDS) up to 650V, gate-source voltage (VGS) of ±30V, suitable for high-voltage power conversion and switching circuit applications. Its RDS(ON) value is 680mΩ@VGS=10V, and the on-resistance is low, which can reduce switching losses and improve efficiency. This device adopts planar structure technology, has good switching characteristics and thermal performance, and has a rated current of 12A, which is suitable for use in power management and circuit protection in high-voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
HFS9N50-VB MOSFET detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turning threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ @ VGS=10V
- **Drain current (ID)**: 12A
- **Technology**: Planar structure
- **Switching characteristics**: Good switching speed and efficiency
- **Thermal performance**: Using TO220F package, excellent heat dissipation performance
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turning threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ @ VGS=10V
- **Drain current (ID)**: 12A
- **Technology**: Planar structure
- **Switching characteristics**: Good switching speed and efficiency
- **Thermal performance**: Using TO220F package, excellent heat dissipation performance
Domain and module applications：
HFS9N50-VB MOSFET Applicable Fields and Modules
HFS9N50-VB MOSFET is widely used in fields that require high-voltage switching and power conversion. Due to its high drain-source voltage of 650V and drain current capability of 12A, this MOSFET is particularly suitable for the following scenarios:
1. **Switching Power Supply (SMPS)**: In high-voltage DC-DC Converter (DC-DC Converter), HFS9N50-VB can be used as a switching device to provide efficient power conversion while reducing switching losses.
2. **Uninterruptible Power Supply (UPS)**: In UPS systems, this MOSFET can be used as a key switching element of the inverter module to ensure stable operation of the system under high-voltage environment.
3. **Motor Drive**: For industrial motor drive modules, HFS9N50-VB can handle the high-voltage pulses generated during motor startup and operation through its high voltage withstand characteristics.
4. **Photovoltaic inverter**: In photovoltaic systems, it is used to convert DC power into AC power. This MOSFET can work efficiently in a high-voltage environment and improve the overall performance of the inverter.
With its high withstand voltage and excellent switching performance, the HFS9N50-VB is suitable for various high-voltage power supply and switching applications, helping to achieve stable and efficient energy management and conversion.
HFS9N50-VB MOSFET is widely used in fields that require high-voltage switching and power conversion. Due to its high drain-source voltage of 650V and drain current capability of 12A, this MOSFET is particularly suitable for the following scenarios:
1. **Switching Power Supply (SMPS)**: In high-voltage DC-DC Converter (DC-DC Converter), HFS9N50-VB can be used as a switching device to provide efficient power conversion while reducing switching losses.
2. **Uninterruptible Power Supply (UPS)**: In UPS systems, this MOSFET can be used as a key switching element of the inverter module to ensure stable operation of the system under high-voltage environment.
3. **Motor Drive**: For industrial motor drive modules, HFS9N50-VB can handle the high-voltage pulses generated during motor startup and operation through its high voltage withstand characteristics.
4. **Photovoltaic inverter**: In photovoltaic systems, it is used to convert DC power into AC power. This MOSFET can work efficiently in a high-voltage environment and improve the overall performance of the inverter.
With its high withstand voltage and excellent switching performance, the HFS9N50-VB is suitable for various high-voltage power supply and switching applications, helping to achieve stable and efficient energy management and conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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