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HFS8N70U-VB Product details
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HFS8N70U-VB MOSFET Product Introduction
HFS8N70U-VB is a high-voltage single-channel N-type MOSFET in TO220F package, suitable for high-voltage applications. Its maximum drain-source voltage (VDS) is 700V, gate-source voltage (VGS) is ±30V, and threshold voltage (Vth) is 3.5V. The device adopts super junction (SJ) multi-epitaxial technology, has excellent current carrying capacity and low switching loss, and is suitable for power management applications requiring efficient energy conversion. Its on-resistance (RDS(ON)) is 1100mΩ (at VGS of 10V) and the maximum drain current (ID) is 5A.
HFS8N70U-VB is a high-voltage single-channel N-type MOSFET in TO220F package, suitable for high-voltage applications. Its maximum drain-source voltage (VDS) is 700V, gate-source voltage (VGS) is ±30V, and threshold voltage (Vth) is 3.5V. The device adopts super junction (SJ) multi-epitaxial technology, has excellent current carrying capacity and low switching loss, and is suitable for power management applications requiring efficient energy conversion. Its on-resistance (RDS(ON)) is 1100mΩ (at VGS of 10V) and the maximum drain current (ID) is 5A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
HFS8N70U-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single channel N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: Super junction (SJ) multi-epitaxial technology
- **Power dissipation (Pd)**: 50W (typical)
- **Junction temperature range**: -55°C to 150°C
- **Package type**: TO220F
- **Configuration**: Single channel N-type MOSFET
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: Super junction (SJ) multi-epitaxial technology
- **Power dissipation (Pd)**: 50W (typical)
- **Junction temperature range**: -55°C to 150°C
Domain and module applications：
Application fields and module examples
With its high voltage carrying capability and relatively low on-resistance, the HFS8N70U-VB MOSFET is very suitable for the following fields and modules:
1. **Power management module**: Suitable for efficient energy conversion in switching power supplies (SMPS) and power electronic converters. For example, in PFC (power factor correction) circuits, the HFS8N70U-VB can be used as the main switching device to reduce switching losses and improve system efficiency.
2. **Industrial automation equipment**: In industrial control systems that require high voltage drive, such as motor drives and inverters, the HFS8N70U-VB can be used to achieve efficient power transmission and provide reliable switching performance.
3. **Household appliances**: The device can also be used in high-voltage circuits in household appliances, such as the power supply section in microwave ovens and air conditioners, to ensure stable operation of the equipment under high voltage conditions.
The design and technology of the HFS8N70U-VB MOSFET make it an ideal choice for high-efficiency, high-reliability circuits, especially in application scenarios requiring high voltage and high power.
With its high voltage carrying capability and relatively low on-resistance, the HFS8N70U-VB MOSFET is very suitable for the following fields and modules:
1. **Power management module**: Suitable for efficient energy conversion in switching power supplies (SMPS) and power electronic converters. For example, in PFC (power factor correction) circuits, the HFS8N70U-VB can be used as the main switching device to reduce switching losses and improve system efficiency.
2. **Industrial automation equipment**: In industrial control systems that require high voltage drive, such as motor drives and inverters, the HFS8N70U-VB can be used to achieve efficient power transmission and provide reliable switching performance.
3. **Household appliances**: The device can also be used in high-voltage circuits in household appliances, such as the power supply section in microwave ovens and air conditioners, to ensure stable operation of the equipment under high voltage conditions.
The design and technology of the HFS8N70U-VB MOSFET make it an ideal choice for high-efficiency, high-reliability circuits, especially in application scenarios requiring high voltage and high power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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