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HFS8N65U-VB Product details
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1. HFS8N65U-VB Product Introduction
HFS8N65U-VB is a high-performance single N-channel MOSFET in TO220F package, suitable for applications requiring high voltage operation. The device has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V, ensuring stable operation under high voltage. Its on-resistance (RDS(ON)) is 1100mΩ (at VGS=10V), and can support a continuous drain current (ID) of up to 7A. Manufactured based on planar technology, this MOSFET provides excellent switching performance and durability, and is suitable for use in harsh electrical environments.
HFS8N65U-VB is a high-performance single N-channel MOSFET in TO220F package, suitable for applications requiring high voltage operation. The device has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V, ensuring stable operation under high voltage. Its on-resistance (RDS(ON)) is 1100mΩ (at VGS=10V), and can support a continuous drain current (ID) of up to 7A. Manufactured based on planar technology, this MOSFET provides excellent switching performance and durability, and is suitable for use in harsh electrical environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description of HFS8N65U-VB
1. **Package type**: TO220F
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 7A
8. **Technology type**: Planar technology
9. **Breakdown voltage (BVDSS)**: 650V
10. **Maximum power dissipation (Ptot)**: 45W
11. **Operating temperature range**: -55°C to +150°C
12. **Switching Speed**: Fast switching time for high frequency operation
13. **Input Capacitance (Ciss)**: 900pF
14. **Output Capacitance (Coss)**: 75pF
15. **Reverse Recovery Time (trr)**: 200ns
1. **Package type**: TO220F
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
7. **Continuous drain current (ID)**: 7A
8. **Technology type**: Planar technology
9. **Breakdown voltage (BVDSS)**: 650V
10. **Maximum power dissipation (Ptot)**: 45W
11. **Operating temperature range**: -55°C to +150°C
12. **Switching Speed**: Fast switching time for high frequency operation
13. **Input Capacitance (Ciss)**: 900pF
14. **Output Capacitance (Coss)**: 75pF
15. **Reverse Recovery Time (trr)**: 200ns
Domain and module applications：
3. Application fields and modules of HFS8N65U-VB
HFS8N65U-VB MOSFET is suitable for a variety of high-voltage applications, especially in environments that require efficient switching and robust operation. For example:
1. **Power management module**: In the switching power supply (SMPS), HFS8N65U-VB can handle high voltage and provide low conduction loss, which is an ideal choice in PFC (power factor correction) and DC-DC converters.
2. **Lighting driver**: Suitable for the switching circuit of LED lighting driver, it can provide high efficiency and low heat loss, extending the service life of lamps.
3. **Industrial motor drive**: In the motor drive module, HFS8N65U-VB can provide stable current control in a high-voltage environment, which is suitable for industrial automation and robotics systems.
4. **Inverter circuit**: Widely used in photovoltaic inverters and uninterruptible power supplies (UPS), HFS8N65U-VB can effectively convert and manage electrical energy with its high withstand voltage and fast switching performance.
These characteristics make HFS8N65U-VB MOSFET excel in power electronic equipment that requires high reliability and high efficiency.
HFS8N65U-VB MOSFET is suitable for a variety of high-voltage applications, especially in environments that require efficient switching and robust operation. For example:
1. **Power management module**: In the switching power supply (SMPS), HFS8N65U-VB can handle high voltage and provide low conduction loss, which is an ideal choice in PFC (power factor correction) and DC-DC converters.
2. **Lighting driver**: Suitable for the switching circuit of LED lighting driver, it can provide high efficiency and low heat loss, extending the service life of lamps.
3. **Industrial motor drive**: In the motor drive module, HFS8N65U-VB can provide stable current control in a high-voltage environment, which is suitable for industrial automation and robotics systems.
4. **Inverter circuit**: Widely used in photovoltaic inverters and uninterruptible power supplies (UPS), HFS8N65U-VB can effectively convert and manage electrical energy with its high withstand voltage and fast switching performance.
These characteristics make HFS8N65U-VB MOSFET excel in power electronic equipment that requires high reliability and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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