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HFS7N60-VB Product details
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HFS7N60-VB MOSFET Product Introduction
HFS7N60-VB is a high-voltage N-channel MOSFET in a TO220F package, suitable for applications requiring high voltage and medium current capability. The device can withstand a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. At VGS=10V, its on-resistance (RDS(ON)) is 1100mΩ and the maximum leakage current (ID) is 7A. Designed based on Plannar technology, the HFS7N60-VB is optimized for high-voltage power conversion and switching applications, with efficient switching characteristics and excellent reliability.
HFS7N60-VB is a high-voltage N-channel MOSFET in a TO220F package, suitable for applications requiring high voltage and medium current capability. The device can withstand a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. At VGS=10V, its on-resistance (RDS(ON)) is 1100mΩ and the maximum leakage current (ID) is 7A. Designed based on Plannar technology, the HFS7N60-VB is optimized for high-voltage power conversion and switching applications, with efficient switching characteristics and excellent reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package:** TO220F
- Provides excellent heat dissipation and electrical performance, suitable for medium to high power applications.
- **Configuration:** Single N-channel
- Single N-channel design, suitable for single-channel switch control, providing reliable current control capability.
- **VDS (drain-source voltage):** 650V
- Able to withstand drain-source voltages up to 650V, suitable for high voltage power switches and power conversion applications.
- **VGS (gate-source voltage):** ±30V
- The gate-source voltage range is ±30V, which meets the needs of a variety of gate drive circuits.
- **Vth (threshold voltage):** 3.5V
- The threshold voltage is 3.5V, ensuring reliable conduction under common gate drive voltages.
- **RDS(ON):** 1100mΩ @ VGS=10V
- The on-resistance is 1100mΩ at VGS=10V, which is suitable for providing stable conduction performance at high voltage.
- **ID(Drain Current):** 7A
- The maximum drain current is 7A, supporting medium current load, suitable for medium power switching applications.
- **Technology:** Plannar
- Using Plannar process, the reliability and durability under high voltage conditions are optimized, suitable for high voltage power conversion applications.
- **Package:** TO220F
- Provides excellent heat dissipation and electrical performance, suitable for medium to high power applications.
- **Configuration:** Single N-channel
- Single N-channel design, suitable for single-channel switch control, providing reliable current control capability.
- **VDS (drain-source voltage):** 650V
- Able to withstand drain-source voltages up to 650V, suitable for high voltage power switches and power conversion applications.
- **VGS (gate-source voltage):** ±30V
- The gate-source voltage range is ±30V, which meets the needs of a variety of gate drive circuits.
- **Vth (threshold voltage):** 3.5V
- The threshold voltage is 3.5V, ensuring reliable conduction under common gate drive voltages.
- **RDS(ON):** 1100mΩ @ VGS=10V
- The on-resistance is 1100mΩ at VGS=10V, which is suitable for providing stable conduction performance at high voltage.
- **ID(Drain Current):** 7A
- The maximum drain current is 7A, supporting medium current load, suitable for medium power switching applications.
- **Technology:** Plannar
- Using Plannar process, the reliability and durability under high voltage conditions are optimized, suitable for high voltage power conversion applications.
Domain and module applications：
Application Examples
HFS7N60-VB MOSFET is suitable for several important application areas due to its high voltage tolerance and medium current capability:
1. **High-voltage switching power supply:** In industrial power supplies and power adapters, HFS7N60-VB can be used in the design of high-voltage switching power supplies to help achieve efficient energy conversion and stable power management at a high voltage of 650V.
2. **Power inverter:** This MOSFET is very suitable for use in equipment such as solar inverters and uninterruptible power supplies (UPS), and its high-voltage switching capability can achieve reliable power conversion and inversion operations.
3. **Lighting system:** HFS7N60-VB can be used as a switching element in high-voltage LED drive circuits to ensure stable operation and efficient control of lighting systems under high voltage.
4. **Power tools:** In the power control module of power tools, this MOSFET can be used in high-voltage drive circuits to provide reliable current control and efficient switching functions.
The HFS7N60-VB MOSFET is designed to provide stable and reliable performance in high voltage applications such as high voltage switching power supplies, power inverters, lighting systems, and power control modules in power tools.
HFS7N60-VB MOSFET is suitable for several important application areas due to its high voltage tolerance and medium current capability:
1. **High-voltage switching power supply:** In industrial power supplies and power adapters, HFS7N60-VB can be used in the design of high-voltage switching power supplies to help achieve efficient energy conversion and stable power management at a high voltage of 650V.
2. **Power inverter:** This MOSFET is very suitable for use in equipment such as solar inverters and uninterruptible power supplies (UPS), and its high-voltage switching capability can achieve reliable power conversion and inversion operations.
3. **Lighting system:** HFS7N60-VB can be used as a switching element in high-voltage LED drive circuits to ensure stable operation and efficient control of lighting systems under high voltage.
4. **Power tools:** In the power control module of power tools, this MOSFET can be used in high-voltage drive circuits to provide reliable current control and efficient switching functions.
The HFS7N60-VB MOSFET is designed to provide stable and reliable performance in high voltage applications such as high voltage switching power supplies, power inverters, lighting systems, and power control modules in power tools.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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