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HFS730-VB Product details
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1. HFS730-VB Product Introduction
HFS730-VB is a high-voltage N-channel MOSFET packaged in TO220F, suitable for high-voltage applications. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, a turn-on voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 830mΩ at VGS=10V, and a maximum drain current (ID) of 10A. This product uses Plannar technology and is suitable for power management and power conversion applications that require high efficiency and high reliability.
HFS730-VB is a high-voltage N-channel MOSFET packaged in TO220F, suitable for high-voltage applications. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, a turn-on voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 830mΩ at VGS=10V, and a maximum drain current (ID) of 10A. This product uses Plannar technology and is suitable for power management and power conversion applications that require high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description of HFS730-VB
1. **Package type**: TO220F
- **Description**: The TO220F package design has excellent heat dissipation performance and a rugged structure, and is suitable for scenarios where effective heat dissipation is required in high-power applications.
2. **Configuration**: Single N-channel
- **Description**: The single N-channel configuration ensures that this MOSFET operates effectively under high voltage and high current conditions, providing excellent current control capabilities.
3. **Drain-source voltage (VDS)**: 650V
- **Description**: The 650V drain-source voltage enables the HFS730-VB to operate in high-voltage power and conversion applications, and withstand high voltage stress without damage.
4. **Gate-source voltage (VGS)**: ±30V
- **Description**: The wide range of gate-source voltage ensures the driving flexibility of MOSFET and adapts to various driving circuit designs.
5. **Throw-on voltage (Vth)**: 3.5V
- **Description**: The 3.5V turn-on voltage ensures the stable turn-on of MOSFET at a lower gate-source voltage, which is suitable for precise current control requirements.
6. **On-resistance (RDS(ON))**: 830mΩ @ VGS=10V
- **Description**: The on-resistance is 830mΩ when VGS=10V, which enables this MOSFET to effectively reduce conduction loss and improve energy efficiency, especially suitable for high-efficiency power conversion applications.
7. **Maximum Drain Current (ID)**: 10A
- **Description**: The maximum drain current is 10A, which enables this MOSFET to handle higher current loads and is suitable for medium and high power applications.
8. **Technology**: Plannar
- **Description**: Using Plannar technology, it provides high reliability and stability, suitable for high-voltage application scenarios with long-term stable operation.
1. **Package type**: TO220F
- **Description**: The TO220F package design has excellent heat dissipation performance and a rugged structure, and is suitable for scenarios where effective heat dissipation is required in high-power applications.
2. **Configuration**: Single N-channel
- **Description**: The single N-channel configuration ensures that this MOSFET operates effectively under high voltage and high current conditions, providing excellent current control capabilities.
3. **Drain-source voltage (VDS)**: 650V
- **Description**: The 650V drain-source voltage enables the HFS730-VB to operate in high-voltage power and conversion applications, and withstand high voltage stress without damage.
4. **Gate-source voltage (VGS)**: ±30V
- **Description**: The wide range of gate-source voltage ensures the driving flexibility of MOSFET and adapts to various driving circuit designs.
5. **Throw-on voltage (Vth)**: 3.5V
- **Description**: The 3.5V turn-on voltage ensures the stable turn-on of MOSFET at a lower gate-source voltage, which is suitable for precise current control requirements.
6. **On-resistance (RDS(ON))**: 830mΩ @ VGS=10V
- **Description**: The on-resistance is 830mΩ when VGS=10V, which enables this MOSFET to effectively reduce conduction loss and improve energy efficiency, especially suitable for high-efficiency power conversion applications.
7. **Maximum Drain Current (ID)**: 10A
- **Description**: The maximum drain current is 10A, which enables this MOSFET to handle higher current loads and is suitable for medium and high power applications.
8. **Technology**: Plannar
- **Description**: Using Plannar technology, it provides high reliability and stability, suitable for high-voltage application scenarios with long-term stable operation.
Domain and module applications：
3. Application fields and module examples
1. **High-voltage power converter**:
- The high drain-source voltage and medium on-resistance of HFS730-VB make it excellent in high-voltage power converters, such as AC-DC and DC-DC converters. It can effectively manage high-voltage loads in power conversion, improve conversion efficiency and overall system performance.
2. **Motor control system**:
- The high current capability and reliable conduction characteristics of this MOSFET make it suitable for high-voltage motor control systems, especially for controlling the start-up and operation of high-power motors in industrial automation equipment.
3. **Switching power supply (SMPS)**:
- In the switching power supply, HFS730-VB can be used as a high-voltage switching device, which can provide stable performance in high-frequency switching operations, and is suitable for computer power supplies and communication equipment power supplies.
4. **Solar Inverter**:
- Solar inverters need to handle high voltage inputs, and the 650V drain-source voltage and high current handling capability of the HFS730-VB make it an ideal choice for this field, helping to improve the conversion efficiency and reliability of the inverter.
5. **Uninterruptible Power Supply (UPS)**:
- In UPS systems, this MOSFET can be used in battery management modules and high-voltage switch modules to ensure reliable operation of the system under high voltage conditions and stability of power transmission.
HFS730-VB is an excellent high-voltage MOSFET suitable for a variety of high-voltage application scenarios, such as power conversion, industrial control and new energy equipment, and can provide stable performance and reliable power management solutions.
1. **High-voltage power converter**:
- The high drain-source voltage and medium on-resistance of HFS730-VB make it excellent in high-voltage power converters, such as AC-DC and DC-DC converters. It can effectively manage high-voltage loads in power conversion, improve conversion efficiency and overall system performance.
2. **Motor control system**:
- The high current capability and reliable conduction characteristics of this MOSFET make it suitable for high-voltage motor control systems, especially for controlling the start-up and operation of high-power motors in industrial automation equipment.
3. **Switching power supply (SMPS)**:
- In the switching power supply, HFS730-VB can be used as a high-voltage switching device, which can provide stable performance in high-frequency switching operations, and is suitable for computer power supplies and communication equipment power supplies.
4. **Solar Inverter**:
- Solar inverters need to handle high voltage inputs, and the 650V drain-source voltage and high current handling capability of the HFS730-VB make it an ideal choice for this field, helping to improve the conversion efficiency and reliability of the inverter.
5. **Uninterruptible Power Supply (UPS)**:
- In UPS systems, this MOSFET can be used in battery management modules and high-voltage switch modules to ensure reliable operation of the system under high voltage conditions and stability of power transmission.
HFS730-VB is an excellent high-voltage MOSFET suitable for a variety of high-voltage application scenarios, such as power conversion, industrial control and new energy equipment, and can provide stable performance and reliable power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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