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HFS5N50U-VB Product details
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1. HFS5N50U-VB Product Introduction
HFS5N50U-VB is a high voltage N-channel MOSFET in TO220F package. It is designed for high voltage applications and supports 650V drain-source voltage (VDS) and ±30V gate-source voltage (VGS). The turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 1100mΩ at VGS=10V, and the maximum drain current (ID) is 7A. HFS5N50U-VB uses Plannar technology and is suitable for switching and power conversion applications in high voltage environments.
HFS5N50U-VB is a high voltage N-channel MOSFET in TO220F package. It is designed for high voltage applications and supports 650V drain-source voltage (VDS) and ±30V gate-source voltage (VGS). The turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 1100mΩ at VGS=10V, and the maximum drain current (ID) is 7A. HFS5N50U-VB uses Plannar technology and is suitable for switching and power conversion applications in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description of HFS5N50U-VB
1. **Package type**: TO220F
- **Description**: The TO220F package provides excellent heat dissipation and rugged physical protection, suitable for MOSFET applications that handle high power.
2. **Configuration**: Single N-channel
- **Description**: The single N-channel configuration makes this MOSFET suitable for high voltage switching and control circuits, enabling efficient voltage and power management.
3. **Drain-source voltage (VDS)**: 650V
- **Description**: The 650V drain-source voltage enables the HFS5N50U-VB to withstand high voltage loads, suitable for high voltage power supply and power conversion applications.
4. **Gate-source voltage (VGS)**: ±30V
- **Description**: The allowable gate-source voltage range is ±30V, ensuring that the MOSFET is compatible with a variety of drive circuits and suitable for different control requirements.
5. **Throw-on voltage (Vth)**: 3.5V
- **Description**: The turn-on voltage is 3.5V, ensuring that the MOSFET can be stably turned on at a moderate gate-source voltage and provide reliable switching performance.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Description**: The on-resistance at VGS=10V is 1100mΩ, which is suitable for handling medium current loads, helping to reduce switching losses and improve overall efficiency.
7. **Maximum drain current (ID)**: 7A
- **Description**: The maximum drain current is 7A, which is suitable for switching and controlling medium power loads to ensure the reliability and stability of the equipment.
8. **Technology**: Plannar
- **Description**: Using Plannar technology, it is suitable for high voltage MOSFET applications, providing stable electrical performance and good reliability.
1. **Package type**: TO220F
- **Description**: The TO220F package provides excellent heat dissipation and rugged physical protection, suitable for MOSFET applications that handle high power.
2. **Configuration**: Single N-channel
- **Description**: The single N-channel configuration makes this MOSFET suitable for high voltage switching and control circuits, enabling efficient voltage and power management.
3. **Drain-source voltage (VDS)**: 650V
- **Description**: The 650V drain-source voltage enables the HFS5N50U-VB to withstand high voltage loads, suitable for high voltage power supply and power conversion applications.
4. **Gate-source voltage (VGS)**: ±30V
- **Description**: The allowable gate-source voltage range is ±30V, ensuring that the MOSFET is compatible with a variety of drive circuits and suitable for different control requirements.
5. **Throw-on voltage (Vth)**: 3.5V
- **Description**: The turn-on voltage is 3.5V, ensuring that the MOSFET can be stably turned on at a moderate gate-source voltage and provide reliable switching performance.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Description**: The on-resistance at VGS=10V is 1100mΩ, which is suitable for handling medium current loads, helping to reduce switching losses and improve overall efficiency.
7. **Maximum drain current (ID)**: 7A
- **Description**: The maximum drain current is 7A, which is suitable for switching and controlling medium power loads to ensure the reliability and stability of the equipment.
8. **Technology**: Plannar
- **Description**: Using Plannar technology, it is suitable for high voltage MOSFET applications, providing stable electrical performance and good reliability.
Domain and module applications：
III. Application fields and module examples
1. **High voltage switching power supply**:
- The high drain-source voltage of HFS5N50U-VB makes it very suitable for high voltage switching power supply applications. In the switching and regulation of high voltage DC power supply, this MOSFET can effectively control the current to ensure the stability and efficiency of the power supply.
2. **Power conversion module**:
- In the high voltage power conversion module, HFS5N50U-VB is used as a switching device, which can handle high voltage loads and is suitable for high voltage switching functions in DC-DC converters to improve power conversion efficiency.
3. **Motor drive**:
- HFS5N50U-VB can be used for high voltage switching in motor drives, especially in application scenarios that need to withstand high voltages, such as power tools or high voltage DC motor drives.
4. **High-voltage protection circuit**:
- The high voltage tolerance of this MOSFET makes it suitable for high-voltage protection circuits, such as overvoltage protection and overcurrent protection. It can effectively protect other circuit components from high voltage shocks and ensure the safety of the system.
5. **Power regulation system**:
- In the power regulation system, HFS5N50U-VB can be used as a switching device to control power distribution, such as in regulating power supply voltage and power output, providing precise control and stable performance.
HFS5N50U-VB is a high-voltage MOSFET suitable for high voltage and medium current applications. Its stability and reliability make it excellent in the field of high voltage switching and power conversion.
1. **High voltage switching power supply**:
- The high drain-source voltage of HFS5N50U-VB makes it very suitable for high voltage switching power supply applications. In the switching and regulation of high voltage DC power supply, this MOSFET can effectively control the current to ensure the stability and efficiency of the power supply.
2. **Power conversion module**:
- In the high voltage power conversion module, HFS5N50U-VB is used as a switching device, which can handle high voltage loads and is suitable for high voltage switching functions in DC-DC converters to improve power conversion efficiency.
3. **Motor drive**:
- HFS5N50U-VB can be used for high voltage switching in motor drives, especially in application scenarios that need to withstand high voltages, such as power tools or high voltage DC motor drives.
4. **High-voltage protection circuit**:
- The high voltage tolerance of this MOSFET makes it suitable for high-voltage protection circuits, such as overvoltage protection and overcurrent protection. It can effectively protect other circuit components from high voltage shocks and ensure the safety of the system.
5. **Power regulation system**:
- In the power regulation system, HFS5N50U-VB can be used as a switching device to control power distribution, such as in regulating power supply voltage and power output, providing precise control and stable performance.
HFS5N50U-VB is a high-voltage MOSFET suitable for high voltage and medium current applications. Its stability and reliability make it excellent in the field of high voltage switching and power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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