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HFS2N90-VB Product details
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HFS2N90-VB MOSFET Product Introduction
HFS2N90-VB is a high voltage N-channel MOSFET packaged in TO220F. It has a drain-source voltage (VDS) of 950V and a gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 5400mΩ (@ VGS=10V), and a maximum leakage current of 3A. Using Plannar technology, this MOSFET is designed to handle switching tasks in high-voltage applications, especially in situations where high voltage resistance and stable performance are required. HFS2N90-VB is suitable for power conversion, switching power supplies, and other scenarios requiring high voltage switching.
HFS2N90-VB is a high voltage N-channel MOSFET packaged in TO220F. It has a drain-source voltage (VDS) of 950V and a gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 5400mΩ (@ VGS=10V), and a maximum leakage current of 3A. Using Plannar technology, this MOSFET is designed to handle switching tasks in high-voltage applications, especially in situations where high voltage resistance and stable performance are required. HFS2N90-VB is suitable for power conversion, switching power supplies, and other scenarios requiring high voltage switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 3A | 5400mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 3A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 950V | 3.5V | 3A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package:** TO220F
- Provides good heat dissipation and electrical performance, suitable for traditional plug-in applications, and can work stably in medium to high power applications.
- **Configuration:** Single N-channel
- Single N-channel MOSFET configuration, suitable for applications requiring single-channel switch control, providing reliable switching performance.
- **VDS (drain-source voltage):** 950V
- Able to withstand drain-source voltages up to 950V, suitable for switching operations in high voltage applications.
- **VGS (gate-source voltage):** ±30V
- Supports a gate-source voltage range of ±30V, suitable for various gate drive conditions.
- **Vth (threshold voltage):** 3.5V
- The threshold voltage is 3.5V, ensuring stable turn-on under appropriate gate voltage.
- **RDS(ON):** 5400mΩ @ VGS=10V
- The on-resistance is 5400mΩ, which is suitable for medium current high voltage switch applications. Although the on-resistance is high, it can still work effectively under high voltage conditions.
- **ID (leakage current):** 3A
- The maximum leakage current is 3A, which is suitable for high voltage applications with medium current load.
- **Technology:** Plannar
- Using Plannar process technology, the stability and durability under high voltage are optimized, which is suitable for high voltage and high power applications.
- **Package:** TO220F
- Provides good heat dissipation and electrical performance, suitable for traditional plug-in applications, and can work stably in medium to high power applications.
- **Configuration:** Single N-channel
- Single N-channel MOSFET configuration, suitable for applications requiring single-channel switch control, providing reliable switching performance.
- **VDS (drain-source voltage):** 950V
- Able to withstand drain-source voltages up to 950V, suitable for switching operations in high voltage applications.
- **VGS (gate-source voltage):** ±30V
- Supports a gate-source voltage range of ±30V, suitable for various gate drive conditions.
- **Vth (threshold voltage):** 3.5V
- The threshold voltage is 3.5V, ensuring stable turn-on under appropriate gate voltage.
- **RDS(ON):** 5400mΩ @ VGS=10V
- The on-resistance is 5400mΩ, which is suitable for medium current high voltage switch applications. Although the on-resistance is high, it can still work effectively under high voltage conditions.
- **ID (leakage current):** 3A
- The maximum leakage current is 3A, which is suitable for high voltage applications with medium current load.
- **Technology:** Plannar
- Using Plannar process technology, the stability and durability under high voltage are optimized, which is suitable for high voltage and high power applications.
Domain and module applications：
Application Examples
The high voltage and medium current capabilities of the HFS2N90-VB make it widely used in multiple fields and modules:
1. **Switching Power Supply:** The HFS2N90-VB is suitable for high voltage switching power supplies (SMPS) such as industrial power supplies and power adapters. Its 950V drain-source voltage enables it to handle the switching tasks of high voltage power supplies, ensuring efficient power conversion and reliability.
2. **Power Inverter:** In solar inverters, UPS (uninterruptible power supply) and other power inverter applications, the HFS2N90-VB is able to provide the necessary high voltage switching capabilities to ensure system stability and reliability.
3. **High Voltage Switching:** This MOSFET can be used in a variety of applications that require high voltage switching, such as protection circuits for high voltage power supplies and high voltage switching in motor drive systems.
4. **High-voltage power conversion:** HFS2N90-VB is suitable for high-voltage power conversion modules, such as power supply equipment, converters and high-voltage load control circuits, providing stable high-voltage switching functions.
HFS2N90-VB MOSFET, with its high voltage tolerance and stable switching performance, performs well in application fields such as switching power supplies, power inverters, high-voltage switches and high-voltage power conversion, meeting the application requirements of high voltage and medium current requirements.
The high voltage and medium current capabilities of the HFS2N90-VB make it widely used in multiple fields and modules:
1. **Switching Power Supply:** The HFS2N90-VB is suitable for high voltage switching power supplies (SMPS) such as industrial power supplies and power adapters. Its 950V drain-source voltage enables it to handle the switching tasks of high voltage power supplies, ensuring efficient power conversion and reliability.
2. **Power Inverter:** In solar inverters, UPS (uninterruptible power supply) and other power inverter applications, the HFS2N90-VB is able to provide the necessary high voltage switching capabilities to ensure system stability and reliability.
3. **High Voltage Switching:** This MOSFET can be used in a variety of applications that require high voltage switching, such as protection circuits for high voltage power supplies and high voltage switching in motor drive systems.
4. **High-voltage power conversion:** HFS2N90-VB is suitable for high-voltage power conversion modules, such as power supply equipment, converters and high-voltage load control circuits, providing stable high-voltage switching functions.
HFS2N90-VB MOSFET, with its high voltage tolerance and stable switching performance, performs well in application fields such as switching power supplies, power inverters, high-voltage switches and high-voltage power conversion, meeting the application requirements of high voltage and medium current requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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