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HFS2N65U-VB Product details
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1. HFS2N65U-VB Product Introduction
HFS2N65U-VB is a high-voltage N-channel MOSFET in TO220F package. It is designed to withstand high voltage applications and has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. The turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 1700mΩ at VGS=10V, and the maximum drain current (ID) is 2A. HFS2N65U-VB uses Plannar technology and is suitable for use in high voltage environments. It is widely used in power conversion, switching power supplies, protection circuits and other fields.
HFS2N65U-VB is a high-voltage N-channel MOSFET in TO220F package. It is designed to withstand high voltage applications and has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. The turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 1700mΩ at VGS=10V, and the maximum drain current (ID) is 2A. HFS2N65U-VB uses Plannar technology and is suitable for use in high voltage environments. It is widely used in power conversion, switching power supplies, protection circuits and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description of HFS2N65U-VB
1. **Package type**: TO220F
- The TO220F package has excellent heat dissipation performance and is suitable for handling high-power applications, while providing rugged physical protection and electrical connections.
2. **Configuration**: Single N-channel
- The single N-channel configuration makes this MOSFET suitable for high-voltage switching and control circuits. N-channel MOSFETs have excellent performance in high-voltage environments.
3. **Drain-source voltage (VDS)**: 650V
- The 650V drain-source voltage enables the HFS2N65U-VB to withstand high-voltage loads and is suitable for high-voltage power and power conversion applications.
4. **Gate-Source Voltage (VGS)**: ±30V
- The allowable gate-source voltage range is ±30V, ensuring that the MOSFET is compatible with a variety of drive circuits and supports a wide range of application requirements.
5. **Throw-On Voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, which is suitable for stably turning on the MOSFET at moderate gate-source voltages, ensuring reliable switching performance.
6. **On-Resistance (RDS(ON))**: 1700mΩ @ VGS=10V
- The on-resistance is 1700mΩ at VGS=10V, which is suitable for handling medium current loads and helps reduce switching losses.
7. **Maximum Drain Current (ID)**: 2A
- The maximum drain current is 2A, which enables the HFS2N65U-VB to handle lower current loads and is suitable for low-power power supplies and switching applications.
8. **Technology**: Plannar
- Adopts Plannar technology, which is suitable for high-voltage MOSFET applications and provides stable electrical performance and reliability.
1. **Package type**: TO220F
- The TO220F package has excellent heat dissipation performance and is suitable for handling high-power applications, while providing rugged physical protection and electrical connections.
2. **Configuration**: Single N-channel
- The single N-channel configuration makes this MOSFET suitable for high-voltage switching and control circuits. N-channel MOSFETs have excellent performance in high-voltage environments.
3. **Drain-source voltage (VDS)**: 650V
- The 650V drain-source voltage enables the HFS2N65U-VB to withstand high-voltage loads and is suitable for high-voltage power and power conversion applications.
4. **Gate-Source Voltage (VGS)**: ±30V
- The allowable gate-source voltage range is ±30V, ensuring that the MOSFET is compatible with a variety of drive circuits and supports a wide range of application requirements.
5. **Throw-On Voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, which is suitable for stably turning on the MOSFET at moderate gate-source voltages, ensuring reliable switching performance.
6. **On-Resistance (RDS(ON))**: 1700mΩ @ VGS=10V
- The on-resistance is 1700mΩ at VGS=10V, which is suitable for handling medium current loads and helps reduce switching losses.
7. **Maximum Drain Current (ID)**: 2A
- The maximum drain current is 2A, which enables the HFS2N65U-VB to handle lower current loads and is suitable for low-power power supplies and switching applications.
8. **Technology**: Plannar
- Adopts Plannar technology, which is suitable for high-voltage MOSFET applications and provides stable electrical performance and reliability.
Domain and module applications：
III. Application Fields and Module Examples
1. **High Voltage Power Management**:
- The high drain-source voltage of HFS2N65U-VB makes it very suitable for high voltage power management applications. For example, in the switching and regulation of high voltage DC power supplies, this MOSFET can effectively control and manage voltage loads to ensure system stability and reliability.
2. **Switching Power Supply**:
- In switching power supply applications, HFS2N65U-VB is used as a high voltage switching device. Its high drain-source voltage and moderate on-resistance make it suitable for power switches and power control modules.
3. **Motor Driver**:
- Although this MOSFET is suitable for lower current applications, it can be used as a switching device in high voltage motor drivers. For example, in switching and regulation applications for controlling low power motors, it can handle a certain current load.
4. **High Voltage Protection Circuit**:
- The high voltage capability of HFS2N65U-VB makes it suitable for high voltage protection circuits, such as overvoltage protection and overcurrent protection. It can effectively protect other circuit components from high voltage shocks.
5. **Power Conversion**:
- In high voltage DC to DC (DC-DC) converters, this MOSFET is capable of handling high voltage loads and is suitable for high voltage power conversion modules such as power management and voltage regulation applications.
HFS2N65U-VB is a high voltage MOSFET suitable for high voltage and low current applications, and its stability and reliability make it an important component in high power power management and conversion.
1. **High Voltage Power Management**:
- The high drain-source voltage of HFS2N65U-VB makes it very suitable for high voltage power management applications. For example, in the switching and regulation of high voltage DC power supplies, this MOSFET can effectively control and manage voltage loads to ensure system stability and reliability.
2. **Switching Power Supply**:
- In switching power supply applications, HFS2N65U-VB is used as a high voltage switching device. Its high drain-source voltage and moderate on-resistance make it suitable for power switches and power control modules.
3. **Motor Driver**:
- Although this MOSFET is suitable for lower current applications, it can be used as a switching device in high voltage motor drivers. For example, in switching and regulation applications for controlling low power motors, it can handle a certain current load.
4. **High Voltage Protection Circuit**:
- The high voltage capability of HFS2N65U-VB makes it suitable for high voltage protection circuits, such as overvoltage protection and overcurrent protection. It can effectively protect other circuit components from high voltage shocks.
5. **Power Conversion**:
- In high voltage DC to DC (DC-DC) converters, this MOSFET is capable of handling high voltage loads and is suitable for high voltage power conversion modules such as power management and voltage regulation applications.
HFS2N65U-VB is a high voltage MOSFET suitable for high voltage and low current applications, and its stability and reliability make it an important component in high power power management and conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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