HFS18N50U-VB Product details
Product introduction:
HFS18N50U-VB is a single N-channel power MOSFET in TO220F package, designed for high voltage and high power applications. The device utilizes SJ_Multi-EPI (super junction multi-epitaxial) technology, which significantly improves the performance of the device, especially in terms of high efficiency and low loss. The maximum drain-source voltage of HFS18N50U-VB is 650V, and the gate-source voltage is ±30V, ensuring extremely high reliability in high-voltage applications. With a threshold voltage of 3.5V and an on-resistance of 160mΩ (at a gate-source voltage of 10V), it can support a drain current of up to 20A, making it an ideal choice for various high-voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Channel configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications:
The high voltage characteristics and excellent conduction performance of HFS18N50U-VB make it widely used in the following fields and modules:
1. **Switching power supply (SMPS)**: In the switching power supply, HFS18N50U-VB can be used for high voltage input stage and PFC (power factor correction) circuit. Its high withstand voltage and low on-resistance help improve energy efficiency and reduce losses.
2. **Inverter and converter**: This MOSFET is very suitable for DC-AC inverter and AC-DC converter, especially in solar power generation system, wind power generation system and uninterruptible power supply (UPS). Its high current capability and low conduction loss excel in these applications.
3. **Electric vehicle drive**: HFS18N50U-VB performs well in the motor control module of electric vehicles, especially in application scenarios requiring high voltage and high current. Its reliable high voltage processing capability ensures the stability and safety of the system.
4. **Industrial Motor Control**: This MOSFET provides reliable high voltage control and high efficiency operation in high voltage motor drive and control systems commonly used in industrial automation.
5. **Lighting Control Circuit**: In high voltage lighting control circuits such as high power LED drivers and fluorescent lamp ballasts, the HFS18N50U-VB provides efficient switching performance and low heat loss, extending the life of the system.
The design of the HFS18N50U-VB makes it an ideal choice for high voltage, high power applications, providing an efficient and reliable solution. Its excellent performance characteristics meet the needs of key areas such as power management, energy conversion and industrial control.
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