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HFS13N50S-VB Product details
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HFS13N50S-VB MOSFET Product Introduction
HFS13N50S-VB is a high voltage N-channel MOSFET packaged in TO220F. The device is designed for applications requiring high voltage, high current switching. It has a drain-source voltage (VDS) of 550V and a gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 260mΩ (@ VGS=10V), and a maximum leakage current of 18A. Using Plannar technology, the voltage and current handling capabilities are optimized, enabling it to perform well in high voltage applications. The HFS13N50S-VB is ideal for high-power applications that require high reliability and stability, such as switching power supplies, lighting drives, and motor control.
HFS13N50S-VB is a high voltage N-channel MOSFET packaged in TO220F. The device is designed for applications requiring high voltage, high current switching. It has a drain-source voltage (VDS) of 550V and a gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 260mΩ (@ VGS=10V), and a maximum leakage current of 18A. Using Plannar technology, the voltage and current handling capabilities are optimized, enabling it to perform well in high voltage applications. The HFS13N50S-VB is ideal for high-power applications that require high reliability and stability, such as switching power supplies, lighting drives, and motor control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package:** TO220F
- This package type provides good heat dissipation performance and supports traditional plug-in applications, suitable for medium to high power application scenarios.
- **Configuration:** Single N-channel
- Single N-channel MOSFET configuration, suitable for applications requiring single-channel control, providing reliable switching operation.
- **VDS (drain-source voltage):** 550V
- Able to handle drain-source voltages up to 550V, very suitable for switching applications in high voltage environments.
- **VGS (gate-source voltage):** ±30V
- Supports a gate-source voltage range of ±30V, ensuring flexible driving voltage capabilities in different application environments.
- **Vth (threshold voltage):** 3V
- The threshold voltage is 3V, ensuring that the MOSFET is reliably turned on under appropriate voltage conditions.
- **RDS(ON):** 260mΩ @ VGS=10V
- The on-resistance is 260mΩ, which is suitable for medium current high voltage switching applications and helps to reduce conduction losses.
- **ID (leakage current):** 18A
- The maximum leakage current is 18A, which is suitable for medium to high current application scenarios and can provide sufficient current driving capability.
- **Technology:** Plannar
- The use of Plannar process technology enhances the high voltage resistance and stability of the device, ensuring its reliable performance under high voltage conditions.
- **Package:** TO220F
- This package type provides good heat dissipation performance and supports traditional plug-in applications, suitable for medium to high power application scenarios.
- **Configuration:** Single N-channel
- Single N-channel MOSFET configuration, suitable for applications requiring single-channel control, providing reliable switching operation.
- **VDS (drain-source voltage):** 550V
- Able to handle drain-source voltages up to 550V, very suitable for switching applications in high voltage environments.
- **VGS (gate-source voltage):** ±30V
- Supports a gate-source voltage range of ±30V, ensuring flexible driving voltage capabilities in different application environments.
- **Vth (threshold voltage):** 3V
- The threshold voltage is 3V, ensuring that the MOSFET is reliably turned on under appropriate voltage conditions.
- **RDS(ON):** 260mΩ @ VGS=10V
- The on-resistance is 260mΩ, which is suitable for medium current high voltage switching applications and helps to reduce conduction losses.
- **ID (leakage current):** 18A
- The maximum leakage current is 18A, which is suitable for medium to high current application scenarios and can provide sufficient current driving capability.
- **Technology:** Plannar
- The use of Plannar process technology enhances the high voltage resistance and stability of the device, ensuring its reliable performance under high voltage conditions.
Domain and module applications：
Application Examples
The high voltage and high current capabilities of the HFS13N50S-VB make it widely used in multiple fields and modules:
1. **Switching Power Supply:** The HFS13N50S-VB is ideal for switching power supplies (SMPS) such as adapters, chargers, and industrial power supplies. Its 550V drain-source voltage ensures safe and reliable operation in high-voltage environments, providing efficient power conversion.
2. **Lighting Driver:** This MOSFET is suitable for lighting applications such as LED driver power supplies and fluorescent lamp ballasts. It can provide stable current control under high voltage conditions to ensure reliable operation of lighting equipment.
3. **Motor Control:** The HFS13N50S-VB can be applied to high-voltage motor drive control circuits, such as industrial motor control and motor drives in home appliances. Its high current capability and low on-resistance make it perform well in high-efficiency motor control.
4. **Inverter:** This device can be used in high-voltage inverter applications such as solar inverters and uninterruptible power supplies (UPS), providing efficient power conversion and current control to ensure system stability and reliability.
HFS13N50S-VB MOSFET, with its excellent high voltage handling capability, low on-resistance and high current capability, is widely used in switching power supplies, lighting drives, motor control and high-voltage inverters, meeting the needs of high-efficiency and high-reliability applications.
The high voltage and high current capabilities of the HFS13N50S-VB make it widely used in multiple fields and modules:
1. **Switching Power Supply:** The HFS13N50S-VB is ideal for switching power supplies (SMPS) such as adapters, chargers, and industrial power supplies. Its 550V drain-source voltage ensures safe and reliable operation in high-voltage environments, providing efficient power conversion.
2. **Lighting Driver:** This MOSFET is suitable for lighting applications such as LED driver power supplies and fluorescent lamp ballasts. It can provide stable current control under high voltage conditions to ensure reliable operation of lighting equipment.
3. **Motor Control:** The HFS13N50S-VB can be applied to high-voltage motor drive control circuits, such as industrial motor control and motor drives in home appliances. Its high current capability and low on-resistance make it perform well in high-efficiency motor control.
4. **Inverter:** This device can be used in high-voltage inverter applications such as solar inverters and uninterruptible power supplies (UPS), providing efficient power conversion and current control to ensure system stability and reliability.
HFS13N50S-VB MOSFET, with its excellent high voltage handling capability, low on-resistance and high current capability, is widely used in switching power supplies, lighting drives, motor control and high-voltage inverters, meeting the needs of high-efficiency and high-reliability applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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