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HFS12N60U-VB Product details
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1. HFS12N60U-VB Product Introduction
HFS12N60U-VB is a high-voltage N-channel MOSFET in TO220F package, designed for high-voltage applications. The device supports a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and its turn-on voltage (Vth) is 3.5V. At VGS=10V, the on-resistance (RDS(ON)) is 320mΩ and the maximum drain current (ID) is 20A. HFS12N60U-VB uses Plannar technology and has good switching performance, suitable for power management, high voltage conversion and other high-voltage applications.
HFS12N60U-VB is a high-voltage N-channel MOSFET in TO220F package, designed for high-voltage applications. The device supports a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and its turn-on voltage (Vth) is 3.5V. At VGS=10V, the on-resistance (RDS(ON)) is 320mΩ and the maximum drain current (ID) is 20A. HFS12N60U-VB uses Plannar technology and has good switching performance, suitable for power management, high voltage conversion and other high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. Detailed parameter description of HFS12N60U-VB
1. **Package type**: TO220F
- The TO220F package provides better heat dissipation and is suitable for applications that need to handle higher power. TO220F has an insulating backplane, which can enhance the safety and reliability of the device.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for switching and power control circuits. N-channel MOSFETs generally have advantages in switching speed and on-resistance, suitable for most power conversion applications.
3. **Drain-source voltage (VDS)**: 650V
- The drain-source voltage of 650V enables this MOSFET to handle high voltage loads and is suitable for high voltage power and converter applications.
4. **Gate-Source Voltage (VGS)**: ±30V
- The ±30V gate-source voltage range provides a wide range of control voltage options for the MOSFET, making it compatible with a variety of drive circuits.
5. **Throw-On Voltage (Vth)**: 3.5V
- The 3.5V turn-on voltage ensures that the MOSFET is reliably turned on at moderate gate-source voltages, suitable for a variety of power control applications.
6. **On-Resistance (RDS(ON))**: 320mΩ @ VGS=10V
- The on-resistance is 320mΩ at VGS=10V, which effectively reduces the conduction loss and is suitable for power conversion applications that require high efficiency.
7. **Maximum Drain Current (ID)**: 20A
- The maximum drain current is 20A, making the device suitable for handling medium to high current loads and suitable for high power conversion applications.
8. **Technology**: Plannar
- Adopts Plannar technology, which ensures the stability of the device under high voltage operation and provides reliable switching performance.
1. **Package type**: TO220F
- The TO220F package provides better heat dissipation and is suitable for applications that need to handle higher power. TO220F has an insulating backplane, which can enhance the safety and reliability of the device.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for switching and power control circuits. N-channel MOSFETs generally have advantages in switching speed and on-resistance, suitable for most power conversion applications.
3. **Drain-source voltage (VDS)**: 650V
- The drain-source voltage of 650V enables this MOSFET to handle high voltage loads and is suitable for high voltage power and converter applications.
4. **Gate-Source Voltage (VGS)**: ±30V
- The ±30V gate-source voltage range provides a wide range of control voltage options for the MOSFET, making it compatible with a variety of drive circuits.
5. **Throw-On Voltage (Vth)**: 3.5V
- The 3.5V turn-on voltage ensures that the MOSFET is reliably turned on at moderate gate-source voltages, suitable for a variety of power control applications.
6. **On-Resistance (RDS(ON))**: 320mΩ @ VGS=10V
- The on-resistance is 320mΩ at VGS=10V, which effectively reduces the conduction loss and is suitable for power conversion applications that require high efficiency.
7. **Maximum Drain Current (ID)**: 20A
- The maximum drain current is 20A, making the device suitable for handling medium to high current loads and suitable for high power conversion applications.
8. **Technology**: Plannar
- Adopts Plannar technology, which ensures the stability of the device under high voltage operation and provides reliable switching performance.
Domain and module applications：
3. Application fields and module examples
1. **High-voltage power converter**:
- The HFS12N60U-VB is ideal for high-voltage DC-DC converters and AC-DC power converters. In these applications, the MOSFET is able to effectively handle high-voltage loads and provide stable power output. Its lower on-resistance helps reduce energy loss and improve conversion efficiency.
2. **Motor drive control**:
- In motor drives, the HFS12N60U-VB can be used as a switching device to handle high voltage and high current operations. Its high drain-source voltage and low on-resistance enable it to provide efficient current control in high-power motor applications.
3. **Inverter**:
- This MOSFET is suitable for various types of inverter applications, such as photovoltaic inverters and wind energy converters. Its high voltage capability and good switching performance make it an ideal choice in high-voltage inverter circuits.
4. **Switching Mode Power Supply (SMPS)**:
- In a switching mode power supply, the HFS12N60U-VB can be used in the primary switching stage to handle high voltage and provide reliable switching operation. Its Plannar technology and high current handling capability make it an excellent performer in efficient power management systems.
5. **Industrial Control Systems**:
- The HFS12N60U-VB can also be applied to high voltage switching and protection circuits in industrial control systems to ensure stable operation and high efficiency of the system.
The HFS12N60U-VB is a high-performance N-channel MOSFET that is widely used in a variety of high voltage power management and conversion applications due to its high voltage handling capability, low on-resistance and excellent switching performance.
1. **High-voltage power converter**:
- The HFS12N60U-VB is ideal for high-voltage DC-DC converters and AC-DC power converters. In these applications, the MOSFET is able to effectively handle high-voltage loads and provide stable power output. Its lower on-resistance helps reduce energy loss and improve conversion efficiency.
2. **Motor drive control**:
- In motor drives, the HFS12N60U-VB can be used as a switching device to handle high voltage and high current operations. Its high drain-source voltage and low on-resistance enable it to provide efficient current control in high-power motor applications.
3. **Inverter**:
- This MOSFET is suitable for various types of inverter applications, such as photovoltaic inverters and wind energy converters. Its high voltage capability and good switching performance make it an ideal choice in high-voltage inverter circuits.
4. **Switching Mode Power Supply (SMPS)**:
- In a switching mode power supply, the HFS12N60U-VB can be used in the primary switching stage to handle high voltage and provide reliable switching operation. Its Plannar technology and high current handling capability make it an excellent performer in efficient power management systems.
5. **Industrial Control Systems**:
- The HFS12N60U-VB can also be applied to high voltage switching and protection circuits in industrial control systems to ensure stable operation and high efficiency of the system.
The HFS12N60U-VB is a high-performance N-channel MOSFET that is widely used in a variety of high voltage power management and conversion applications due to its high voltage handling capability, low on-resistance and excellent switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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