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HFS10N60S-VB Product details
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HFS10N60S-VB MOSFET Product Introduction
HFS10N60S-VB is a high voltage N-channel MOSFET packaged in TO220F. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, this MOSFET is suitable for high voltage switching applications. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 680mΩ (@ VGS=10V), and the maximum leakage current is 12A. The use of Plannar technology gives it stable high voltage performance and good power handling capabilities. The HFS10N60S-VB is an ideal choice for switching operations in high voltage environments and can meet the needs of high power and high voltage applications.
HFS10N60S-VB is a high voltage N-channel MOSFET packaged in TO220F. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, this MOSFET is suitable for high voltage switching applications. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 680mΩ (@ VGS=10V), and the maximum leakage current is 12A. The use of Plannar technology gives it stable high voltage performance and good power handling capabilities. The HFS10N60S-VB is an ideal choice for switching operations in high voltage environments and can meet the needs of high power and high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package:** TO220F
- The package type is TO220F, which is suitable for traditional plug-in applications, has good heat dissipation performance and electrical connection stability, and is suitable for medium to high power application requirements.
- **Configuration:** Single N-channel
- Single N-channel MOSFET configuration, suitable for application scenarios requiring single-channel switching.
- **VDS (drain-source voltage):** 650V
- Able to handle drain-source voltages up to 650V, suitable for switching operations in high voltage environments.
- **VGS (gate-source voltage):** ±30V
- Supports gate-source voltages of ±30V, providing a flexible driving voltage range for MOSFETs and ensuring stable switching performance.
- **Vth (threshold voltage):** 3.5V
- The minimum gate-source voltage required to turn on the MOSFET, ensuring that the MOSFET can be effectively switched at the appropriate voltage.
- **RDS(ON):** 680mΩ @ VGS=10V
- The drain-source resistance of the MOSFET in the on state, suitable for medium current high voltage switching applications.
- **ID(Drain Current):** 12A
- The maximum continuous current that the MOSFET can handle, suitable for medium current switching applications.
- **Technology:** Plannar
- Plannar technology is used to optimize the voltage handling capability and power performance of the MOSFET, and improve its stability and reliability.
- **Package:** TO220F
- The package type is TO220F, which is suitable for traditional plug-in applications, has good heat dissipation performance and electrical connection stability, and is suitable for medium to high power application requirements.
- **Configuration:** Single N-channel
- Single N-channel MOSFET configuration, suitable for application scenarios requiring single-channel switching.
- **VDS (drain-source voltage):** 650V
- Able to handle drain-source voltages up to 650V, suitable for switching operations in high voltage environments.
- **VGS (gate-source voltage):** ±30V
- Supports gate-source voltages of ±30V, providing a flexible driving voltage range for MOSFETs and ensuring stable switching performance.
- **Vth (threshold voltage):** 3.5V
- The minimum gate-source voltage required to turn on the MOSFET, ensuring that the MOSFET can be effectively switched at the appropriate voltage.
- **RDS(ON):** 680mΩ @ VGS=10V
- The drain-source resistance of the MOSFET in the on state, suitable for medium current high voltage switching applications.
- **ID(Drain Current):** 12A
- The maximum continuous current that the MOSFET can handle, suitable for medium current switching applications.
- **Technology:** Plannar
- Plannar technology is used to optimize the voltage handling capability and power performance of the MOSFET, and improve its stability and reliability.
Domain and module applications：
Application Examples
The high voltage and medium current capabilities of the HFS10N60S-VB make it suitable for a variety of fields and modules:
1. **High Voltage Power Switch:** The HFS10N60S-VB can perform well in high voltage power switching applications, such as switching power supplies and high voltage converters. Its 650V drain-source voltage capability is suitable for handling high voltage loads, ensuring efficient and reliable operation of the system.
2. **Motor Drive:** In high voltage motor drive applications, such as industrial motors and power tools, the HFS10N60S-VB can provide stable switching performance and is suitable for motor control and drive circuits in high voltage environments.
3. **Lighting Power Supply:** This MOSFET is suitable for high voltage lighting power switches, such as high voltage lamps and LED driver power supplies. It can stably switch under high voltage conditions to ensure the stability and reliability of the lighting system.
4. **Power Conversion:** In high voltage power conversion applications, such as high voltage DC-DC converters, the HFS10N60S-VB is able to handle high voltage switching operations, providing an efficient solution for power conversion.
The high voltage handling capability and medium current capability of the HFS10N60S-VB MOSFET enable it to perform well in high voltage power switching, motor drive, lighting power supply and power conversion, meeting the needs of high power and high voltage applications.
The high voltage and medium current capabilities of the HFS10N60S-VB make it suitable for a variety of fields and modules:
1. **High Voltage Power Switch:** The HFS10N60S-VB can perform well in high voltage power switching applications, such as switching power supplies and high voltage converters. Its 650V drain-source voltage capability is suitable for handling high voltage loads, ensuring efficient and reliable operation of the system.
2. **Motor Drive:** In high voltage motor drive applications, such as industrial motors and power tools, the HFS10N60S-VB can provide stable switching performance and is suitable for motor control and drive circuits in high voltage environments.
3. **Lighting Power Supply:** This MOSFET is suitable for high voltage lighting power switches, such as high voltage lamps and LED driver power supplies. It can stably switch under high voltage conditions to ensure the stability and reliability of the lighting system.
4. **Power Conversion:** In high voltage power conversion applications, such as high voltage DC-DC converters, the HFS10N60S-VB is able to handle high voltage switching operations, providing an efficient solution for power conversion.
The high voltage handling capability and medium current capability of the HFS10N60S-VB MOSFET enable it to perform well in high voltage power switching, motor drive, lighting power supply and power conversion, meeting the needs of high power and high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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