Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
8A |
|
|
780mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
8A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
8A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package:** TO220
- Suitable for surface mounting, with good heat dissipation performance and electrical connection stability, suitable for medium and high power applications.
- **Configuration:** Single N-channel
- Single N-channel MOSFET configuration, suitable for application scenarios requiring single-channel switching.
- **VDS (drain-source voltage):** 600V
- The MOSFET can handle drain-source voltages up to 600V, suitable for applications with high voltage switching operations.
- **VGS (gate-source voltage):** ±30V
- Supports gate-source voltages of ±30V, providing a flexible driving range for the MOSFET and ensuring stable switching performance.
- **Vth (threshold voltage):** 3.5V
- The minimum gate-source voltage required to turn on the MOSFET, ensuring that the MOSFET can be effectively switched at the appropriate voltage.
- **RDS(ON):**
- 1070mΩ @ VGS=4.5V
- 780mΩ @ VGS=10V
- The drain-source resistance of the MOSFET in the on state, suitable for medium resistance requirements in high voltage switching applications.
- **ID(Drain Current):** 8A
- The maximum continuous current that the MOSFET can handle, suitable for medium current switching applications.
- **Technology:** Plannar
- Plannar technology is used to optimize the voltage handling capability and power performance of the MOSFET, and improve its stability and reliability.
Domain and module applications：
Application examples
The high voltage and medium current capabilities of the HFP5N60U-VB MOSFET make it suitable for multiple fields and modules:
1. **High voltage power switch:** Due to its high drain-source voltage of 600V, the HFP5N60U-VB is very suitable for high voltage power switching applications such as switching power supplies and voltage converters. It can stably handle high voltage loads and improve system reliability and efficiency.
2. **Lighting power supply:** In applications that require high voltage lighting power supply, such as high voltage lamp and LED lamp driver power supply, the HFP5N60U-VB can provide stable switching performance and is suitable for power management under high voltage conditions.
3. **Motor drive:** The HFP5N60U-VB is suitable for high voltage motor drive systems, such as drive circuits for industrial motors and power tools. It can handle switching requirements in high voltage environments, ensuring the stability and efficiency of motor control.
4. **Power Conversion:** In power conversion applications, such as high voltage DC-DC converters, the HFP5N60U-VB is able to handle high voltage switching operations, providing efficient power conversion solutions.
The HFP5N60U-VB MOSFET excels in high voltage power switching, lighting power supplies, motor drives, and power conversion with its high voltage handling capability and medium current capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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